Measurement of Local Si-Nanowire Growth Kinetics Using in situ Transmission Electron Microscopy of Heated Cantilevers

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Volumn 6, Issue 18, 2010, Pages 2058-2064

  Kallesøe, Christian ^a   Wen, Cheng Yen ^b   Mølhave, Kristian ^a   Bøggild, Peter ^a   Ross, Frances M ^c  

^a TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

^b PURDUE UNIVERSITY   (United States)

^c IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FINITE-ELEMENT MODELS; IN-SITU; IN-SITU OBSERVATIONS; IN-SITU TRANSMISSION; MICRO-CANTILEVERS; NANOWIRE BRIDGES; NANOWIRE DEVICES; NANOWIRE GROWTH; NUCLEATION PROCESS; SILICON WIRES; TRANSMISSION ELECTRON MICROSCOPE;

ATOMIC FORCE MICROSCOPY; FINITE ELEMENT METHOD; GROWTH KINETICS; IN SITU PROCESSING; NANOCANTILEVERS; TRANSMISSION ELECTRON MICROSCOPY;

NANOWIRES;

NANOWIRE; SILICON;

ARTICLE; BIOLOGICAL MODEL; CHEMISTRY; CRYSTALLIZATION; EVALUATION; FINITE ELEMENT ANALYSIS; HEATING; INSTRUMENTATION; KINETICS; METHODOLOGY; MICROCHIP ANALYSIS; NANOTECHNOLOGY; PARTICLE SIZE; TEMPERATURE; THEORETICAL MODEL; TRANSMISSION ELECTRON MICROSCOPY;

CRYSTALLIZATION; FINITE ELEMENT ANALYSIS; HEATING; KINETICS; MICROCHIP ANALYTICAL PROCEDURES; MICROSCOPY, ELECTRON, TRANSMISSION; MODELS, BIOLOGICAL; MODELS, THEORETICAL; NANOTECHNOLOGY; NANOWIRES; PARTICLE SIZE; SILICON; TEMPERATURE;

EID: 77956937850     PISSN: 16136810     EISSN: 16136829     Source Type: Journal    
DOI: 10.1002/smll.200902187     Document Type: Article

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