Integration, gap formation, and sharpening of III-V heterostructure nanowires by selective etching

Journal of Vacuum Science and Technology B

Volumn 28, Issue 1, 2010, Pages 21-26

  Kallesøe, Christian ^a   Mølhave, Kristian ^a   Larsen, Kasper F ^a   Engstrøm, Daniel ^a   Hansen, Torben M ^a   Bøggild, Peter ^a   Mrtensson, Thomas ^b   Borgström, Magnus ^b   Samuelson, Lars ^b  

^a TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

^b LUND UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; ETCHING; GALLIUM ARSENIDE; GALLIUM PHOSPHIDE; HETEROJUNCTIONS; III-V SEMICONDUCTORS; INDIUM PHOSPHIDE; NANOCATALYSTS; SILICON WAFERS;

CATALYST PARTICLES; GAP FORMATION; NANOSTENCIL LITHOGRAPHIES; NANOSTENCILS; NANOWIRE GROWTH; SELECTIVE ETCHING; SILICON TECHNOLOGIES; THIN-SECTIONS; WAFER-SCALE INTEGRATION; ]+ CATALYST;

NANOWIRES;

EID: 77949405017     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3268135     Document Type: Conference Paper

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