Growth system, structure, and doping of aluminum-seeded epitaxial silicon nanowires

Nano Letters

Volumn 9, Issue 9, 2009, Pages 3296-3301

  Wacaser, Brent A ^a   Reuter, Mark C ^a   Khayyat, Maha M ^b   Wen, Cheng Yen ^c   Haight, Richard ^a   Guha, Supratik ^a   Ross, Frances M ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b KING ABDULAZIZ CITY FOR SCIENCE AND TECHNOLOGY   (Saudi Arabia)

^c PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM FILM; ANNEALING CONDITION; AS-GROWN; CRYSTAL QUALITIES; DOPING LEVELS; ENVIRONMENTAL EXPOSURE; EPITAXIAL SILICON; EUTECTIC TEMPERATURE; GROWTH SYSTEMS; IN-SITU; LOW DIAMETERS; NANOWIRE GROWTH; OPTIMUM GROWTH CONDITIONS; OTHER APPLICATIONS; PROCESS WINDOW; PROCESSING CONDITION; RAPID GROWTH; SI SUBSTRATES; SILICON NANOWIRES; SUPERCOOLED LIQUIDS; SURFACE DENSITY; VAPOR-LIQUID-SOLID; WIRE GROWTH;

ALUMINA; ALUMINUM; ELECTRIC WIRE; ELECTRONIC PROPERTIES; GROWTH TEMPERATURE; LIQUIDS; NANOWIRES; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SUPERCOOLING;

EPITAXIAL GROWTH;

ALUMINUM; NANOWIRE; SILICON;

ARTICLE; ARTIFICIAL MEMBRANE; CHEMICAL STRUCTURE; CHEMISTRY; MATERIALS TESTING; NANOTECHNOLOGY; PARTICLE SIZE; SURFACE PROPERTY;

ALUMINUM; MATERIALS TESTING; MEMBRANES, ARTIFICIAL; MOLECULAR STRUCTURE; NANOTECHNOLOGY; NANOWIRES; PARTICLE SIZE; SILICON; SURFACE PROPERTIES;

EID: 70349956649     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl9015792     Document Type: Article

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