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Volumn 99, Issue 13, 2011, Pages

Chemical insight into origin of forming-free resistive random-access memory devices

(11) Wu, X a,b,c Fang, Z a,b Li, K d Bosman, M e Raghavan, N a Li, X b Yu, H Y a Singh, N b Lo, G Q b Zhang, X X d Pey, K L a,c

a NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

b INSTITUTE OF MICROELECTRONICS (Singapore)

c SINGAPORE UNIVERSITY OF TECHNOLOGY AND DESIGN (Singapore)

d KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY (Saudi Arabia)

e INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

IONIC STATE; MULTILAYER STRUCTURES; OUT-DIFFUSION; PERFORMANCE IMPROVEMENTS; RANDOM ACCESS MEMORIES; REDUCTION-OXIDATION; RESISTIVE RANDOM ACCESS MEMORY; SINGLE-LAYER STRUCTURE;

ELECTRON ENERGY LOSS SPECTROSCOPY; ENERGY DISSIPATION; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

RANDOM ACCESS STORAGE;

EID: 80053509943 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3645623 Document Type: Article

Times cited : (15)

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