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Volumn 107, Issue 9, 2010, Pages

Relationship between carbon nanotube density and hysteresis characteristics of carbon nanotube random network-channel field effect transistors

(3) Hongo, Hiroo a Nihey, Fumiyuki a Yorozu, Shinichi a

a NEC CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBE DENSITIES; CHANNEL THICKNESS; ELECTRIC-FIELD MODEL; HYSTERESIS CHARACTERISTICS; HYSTERESIS MODELS; HYSTERESIS REDUCTION; NANO SCALE; RANDOM NETWORK; TRANSFER CHARACTERISTICS; TRAP ASSISTED TUNNELING;

CARBON NANOTUBES; COMPUTER SIMULATION; ELECTRIC FIELDS; HYSTERESIS; MESFET DEVICES;

FIELD EFFECT TRANSISTORS;

EID: 79251522501 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3402971 Document Type: Article

Times cited : (13)

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