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Volumn 33, Issue 4, 2010, Pages 563-572
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Anisothermal anodic bonding: A method to control global curvature and residual stress
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Author keywords
[No Author keywords available]
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Indexed keywords
RESIDUAL STRESSES;
SILICON WAFERS;
SUBSTRATES;
THERMAL EXPANSION;
BONDED STRUCTURE;
QUANTITATIVE MODELING;
SILICON BONDING;
SILICON ON GLASS;
THERMAL EXPANSION MISMATCH;
THERMAL VARIATION;
THERMO-MECHANICAL FINITE ELEMENT MODELS;
WAFER TEMPERATURE;
WAFER BONDING;
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EID: 79952663854
PISSN: 19385862
EISSN: 19386737
Source Type: Conference Proceeding
DOI: 10.1149/1.3483548 Document Type: Conference Paper |
Times cited : (2)
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References (19)
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