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Volumn 33, Issue 4, 2010, Pages 563-572

Anisothermal anodic bonding: A method to control global curvature and residual stress

Author keywords

[No Author keywords available]

Indexed keywords

RESIDUAL STRESSES; SILICON WAFERS; SUBSTRATES; THERMAL EXPANSION;

EID: 79952663854     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3483548     Document Type: Conference Paper
Times cited : (2)

References (19)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.