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Volumn 37, Issue 7, 2002, Pages 705-715

X-ray diffraction topography at a synchrotron radiation source applied to the study of bonded silicon on insulator material

(6) Hartwig J a Kohler S a,c Ludwig, W a Moriceau, H b Ohler, M a,d Prieur, E a,e

a EUROPEAN SYNCHROTRON RADIATION FACILITY (France)

b CEA LETI (France)

c UNIVERSITY OF ERLANGEN NUREMBERG (Germany)

d INFINEON TECHNOLOGIES AG (Germany)

e Radiolinja Origo Oy (Finland)

Author keywords

Defects; Silicon; Wafer bonding; X ray imaging; X ray topography

Indexed keywords

BONDING; CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); INTERFACES (MATERIALS); SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; SYNCHROTRON RADIATION;

WAFER BONDING; X RAY IMAGING; X RAY TOPOGRAPHY;

X RAY DIFFRACTION ANALYSIS;

EID: 0036064515 PISSN: 02321300 EISSN: None Source Type: Journal
DOI: 10.1002/1521-4079(200207)37:7<705::AID-CRAT705>3.0.CO;2-Q Document Type: Article

Times cited : (12)

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