Fabrication of SiNx-based photonic crystals on GaN-based LED devices with patterned sapphire substrate by nanoimprint lithography

Optics Express

Volumn 20, Issue 10, 2012, Pages 11423-11432

  Byeon, Kyeong Jae ^a   Cho, Joong Yeon ^a   Kim, Jinseung ^a   Park, Hyoungwon ^a   Lee, Heon ^a  

^a Korea University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; ELECTROLUMINESCENCE; FINITE DIFFERENCE TIME DOMAIN METHOD; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT; NANOIMPRINT LITHOGRAPHY; PHOTONIC CRYSTALS; PLASMA ETCHING; SAPPHIRE; SILICON NITRIDE; THREE DIMENSIONAL COMPUTER GRAPHICS;

ELECTROLUMINESCENCE INTENSITY; FINITE DIFFERENCE TIME DOMAIN SIMULATIONS; GAN BASED LED; GAN-BASED LIGHT-EMITTING DIODES; ITO ELECTRODES; IV CHARACTERISTICS; LED DEVICE; LED STRUCTURE; LIGHT EXTRACTION; PATTERNED SAPPHIRE SUBSTRATE; PATTERNING PROCESS; UV NANOIMPRINT LITHOGRAPHY;

LIGHT EMITTING DIODES;

EID: 84861140849     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.20.011423     Document Type: Article

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