Dislocation structure of GaN films grown on planar and nano-patterned sapphire

Journal of Applied Physics

Volumn 110, Issue 5, 2011, Pages

  Cao, Wanjun ^a   Biser, Jeffrey M ^a   Ee, Yik Khoon ^a   Li, Xiao Hang ^a   Tansu, Nelson ^a   Chan, Helen M ^a   Vinci, Richard P ^a  

^a Lehigh University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

C-PLANE SAPPHIRE; CROSS-SECTION TRANSMISSION ELECTRON MICROSCOPIES; DEVICE EFFICIENCY; DISLOCATION STRUCTURES; GAN FILM; GAN GROWTH; METAL-ORGANIC VAPOR PHASE EPITAXY; ON-WAFER; PATTERNED SUBSTRATES; SAPPHIRE SUBSTRATES; SUBMICRON;

CARRIER LIFETIME; COALESCENCE; GALLIUM NITRIDE; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

SCREW DISLOCATIONS;

EID: 80052944431     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3631823     Document Type: Conference Paper

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