The aspect ratio effects on the performances of GaN-based light-emitting diodes with nanopatterned sapphire substrates

Applied Physics Letters

Volumn 97, Issue 2, 2010, Pages

  Kao, Chien Chih ^a   Su, Yan Kuin ^a,b   Lin, Chuing Liang ^b   Chen, Jian Jhong ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b KUN SHAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE QUALITY; GAN BASED LED; GAN-BASED LIGHT-EMITTING DIODES; LIGHT OUTPUT ENHANCEMENT; LIGHT-EXTRACTION EFFICIENCY; SAPPHIRE SUBSTRATES;

EPITAXIAL FILMS; EXTRACTION; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; PRESSURE DROP; SAPPHIRE;

ASPECT RATIO;

EID: 77955148608     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3463471     Document Type: Article

References (7)

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