High-efficiency InGaN-based LEDs grown on patterned sapphire substrates

Optics Express

Volumn 19, Issue 104, 2011, Pages A949-A955

  Huang, Xiao Hui ^a   Liu, Jian Ping ^a   Kong, Jun Jie ^a   Yang, Hui ^a   Wang, Huai Bing ^a  

^a SUZHOU INSTITUTE OF NANO TECH AND NANO BIONICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROSTATIC DISCHARGE; GALLIUM NITRIDE;

DISLOCATIONS DENSITIES; FILL FACTOR; GAN FILM; HIGH EFFICIENCY; INGAN-BASED LED; PATTERNED SAPPHIRE SUBSTRATE; SEM AND TEM; THREADING DISLOCATION; XRD;

ELECTROSTATIC DEVICES;

EID: 79959887858     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.19.00A949     Document Type: Article

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