Polarity-controlled visible/infrared electroluminescence in Si-nanocrystal/Si light-emitting devices

Applied Physics Letters

Volumn 97, Issue 7, 2010, Pages

  Liu, Zhihong ^a   Huang, Jiandong ^b   Joshi, Pooran C ^b   Voutsas, Apostolos T ^b   Hartzell, John ^b   Capasso, Federico ^c   Bao, J ^a  

^a UNIVERSITY OF HOUSTON   (United States)

^b SHARP LABORATORIES OF AMERICA   (United States)

^c HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND EDGE; BLUE-SHIFTED; INFRARED LIGHT; LIGHT EMITTING DEVICES; P-TYPE SI; REVERSE BIAS; ROOM TEMPERATURE; SHORTER WAVELENGTH; SI NANOCRYSTAL; SILICON OXIDE THIN FILMS; SILICON SUBSTRATES; SWITCHABLE; VISIBLE EMISSIONS;

CURRENT DENSITY; ELECTROLUMINESCENCE; IMPACT IONIZATION; LIGHT; LIGHT EMISSION; NANOCRYSTALS; SILICON; SILICON OXIDES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77956032067     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3480403     Document Type: Article

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