Self-assembled InN dots grown on GaN with an In0.08Ga0.92N intermediate layer by metal organic chemical vapor deposition

Journal of Crystal Growth

Volumn 310, Issue 20, 2008, Pages 4456-4459

  Fu, Y K ^a   Kuo, C H ^a   Tun, C J ^b   Kuo, C W ^a   Lai, W C ^c   Chi, G C ^a   Pan, C J ^a   Chen, M C ^d   Hong, H F ^d   Lan, S M ^d  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

^c NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^d INSTITUTE OF NUCLEAR ENERGY RESEARCH   (Taiwan)

Author keywords

A1. Photoluminescence; A3. Metal organic vapor phase epitaxy; B1. Indium nitride; B1. InGaN buffer layer; B2. Semiconducting III V materials

Indexed keywords

CORUNDUM; GALLIUM NITRIDE; ION BEAM ASSISTED DEPOSITION; METALS; NITRIDES; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; ORGANOMETALLICS; SEMICONDUCTING GALLIUM;

A1. PHOTOLUMINESCENCE; A3. METAL-ORGANIC VAPOR PHASE EPITAXY; B1. INDIUM NITRIDE; B1. INGAN BUFFER LAYER; B2. SEMICONDUCTING III-V MATERIALS; INDIUM NITRIDE; METAL-ORGANIC CHEMICAL VAPOR DEPOSITION; SELF-ASSEMBLED;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 52149109925     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.07.067     Document Type: Article

References (18)

1. Nanishi Y., Saito Y., and Yamaguchi T. Jpn. J. Appl. Phys. 42 (2003) 2549
2. Yang F.H., Hwang J.S., Yang Y.J., Chen K.H., and Wang J.H. Jpn. J. Appl. Phys. 41 (2002) L1321
3. Wu J., Walukiewicz W., Yu K.M., Ager III J.W., Haller E.E., Lu H., Schaff W.J., Saito Y., and Nanishi Y. Appl. Phys. Lett. 80 (2002) 3967
4. Hori M., Kano K., Yamaguchi T., Saito Y., Araki T., Nanishi Y., Teraguchi N., and Suziki A. Phys. Stat. Sol. (b) 234 (2002) 750
5. Matsuoka T., Okamoto H., Nakao M., Harima H., and Kurimoto E. Appl. Phys. Lett. 81 2 (2002) 1246
6. Tansley T.L., and Foley C.P. J. Appl. Phys. 59 (1986) 3241
7. Natarajan B.R., Eltoukhy A.H., Greene J.E., and Barr T.L. Thin Solid Films 69 (1980) 201
8. O'Leary S.K., Foutz B.E., Shur M.S., and Eastman L.F. Appl. Phys. Lett. 88 (2006) 152113
9. Briot O., Maleyre B., and Ruffenach S. Appl. Phys. Lett. 83 (2003) 2919
10. Guo Q., Mei X., Ruda H., Tanaka T., Nishio M., and Ogawa H. Jpn. J. Appl. Phys. 42 Part 2 (2003) L508
11. Bhuiyan A.G., Hashimoto A., and Yamamoto A. J. Appl. Phys. 94 (2003) 2779
12. Matsuoka T. In: Pearton S.J. (Ed). GaN and Related Materials (1997), Gordon and Breach, New York 53-59
13. Moon Y.T., Kim D.J., Park J.S., Oh J.T., Lee J.M., Ok Y.W., Kim H., and Park S.J. Appl. Phys. Lett. 79 (2001) 599
14. Wu J., Walukiewicz W., Yu K.M., Ager III J.W., Haller E.E., Lu H., and Schaff W.J. Appl. Phys. Lett. 80 (2002) 4741
15. Cullity B.D. Elements of X-ray Diffraction. second ed. (1978), Addison-Wesley, Reading, MA
16. Yu K.M., Liliental-Weber Z., Walukiewicz W., Shan W., Ager III J.W., Li S.X., Jones R.E., Haller E.E., Lu H., and Schaff W.J. Appl. Phys. Lett. 86 (2005) 071910
17. Ke W.C., Fu C.P., Chen C.Y., Lee L., Ku C.S., Chou W.C., Chang W.-H., Lee M.C., Chen W.K., Lin W.J., and Cheng Y.C. Appl. Phys. Lett. 88 (2006) 191913
18. Brusaferri L., Sanguinetti S., Grilli E., Guzzi M., Bignazzi A., Bogani F., Carraresi L., Colocci M., Bosacchi A., Frigeri P., and Franchi S. Appl. Phys. Lett. 69 (1996) 3354