Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy

Nanoscale Research Letters

Volumn 6, Issue 1, 2011, Pages 1-5

  Shi, K ^a   Li, D B ^b   Song, H P ^a   Guo, Y ^a   Wang, J ^a   Xu, X Q ^a   Liu, J M ^a   Yang, A L ^a   Wei, H Y ^a   Zhang, B ^a   Yang, S Y ^a   Liu, X L ^a   Zhu, Q S ^a   Wang, Z G ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b CHANGCHUN INSTITUTE OF OPTICS   (China)

Author keywords

Conduction band offset; InN diamond heterojunction; Valence band offset; X ray photoelectron spectroscopy

Indexed keywords

CONDUCTION BANDS; HETEROJUNCTIONS; III-V SEMICONDUCTORS; PHOTOELECTRONS; PHOTONS; VALENCE BANDS; X RAY PHOTOELECTRON SPECTROSCOPY;

BAND OFFSETS; CARRIER CONFINEMENTS; CONDUCTION BAND OFFSET; ELECTRONIC DEVICE; ENERGY DISCONTINUITY; VALENCE BAND OFFSETS;

INDIUM COMPOUNDS; HETEROJUNCTIONS;

EID: 79952699814     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1007/s11671-010-9796-6     Document Type: Article

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