Kinetics of self-assembled InN quantum dots grown on Si (111) by plasma-assisted MBE

Journal of Nanoparticle Research

Volumn 13, Issue 3, 2011, Pages 1281-1287

  Kumar, Mahesh ^a,b   Roul, Basanta ^a,b   Bhat, Thirumaleshwara N ^a   Rajpalke, Mohana K ^a   Sinha, Neeraj ^c   Kalghatgi, A T ^b   Krupanidhi, S B ^a  

^a INDIAN INSTITUTE OF SCIENCE   (India)

^b BHARAT ELECTRONICS LIMITED   (India)

^c Office of Principal Scientific Advisor   (India)

Author keywords

Indium nitride; Kinetics; Photoluminescence; Scaling behavior; Semiconductor quantum dot

Indexed keywords

DOT SIZE; FLUX RATES; GROWTH MODES; GROWTH TIME; INDIUM NITRIDE; INN QUANTUM DOTS; KINETICS PARAMETER; LARGE LATTICE MISMATCH; OPTICAL EMISSIONS; PLASMA-ASSISTED MBE; SCALING BEHAVIOR; SCALING FUNCTIONS; SELF-ASSEMBLED; SI (1 1 1);

GROWTH KINETICS; KINETICS; LATTICE MISMATCH; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MORPHOLOGY; NITRIDES; SIZE SEPARATION;

SEMICONDUCTOR QUANTUM DOTS;

INDIUM NITRIDE; QUANTUM DOT; SELF ASSEMBLED MONOLAYER; SILICON 111; SILICON DERIVATIVE; UNCLASSIFIED DRUG;

ANALYTIC METHOD; ARTICLE; CHEMICAL STRUCTURE; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; GROWTH RATE; MEASUREMENT; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PARTICLE SIZE; PHASE SEPARATION; PHOTOLUMINESCENCE; PLASMA; PRIORITY JOURNAL; RADIOFREQUENCY; SEMICONDUCTOR; STATISTICAL ANALYSIS; STRUCTURE ANALYSIS; TRANSPORT KINETICS; X RAY POWDER DIFFRACTION;

EID: 79956070570     PISSN: 13880764     EISSN: 1572896X     Source Type: Journal    
DOI: 10.1007/s11051-010-0121-1     Document Type: Article

References (20)

1. Amar JG, Family F (1995) Critical cluster size: island morphology and size distribution in Submonolayer epitaxial growth. Phys Rev Lett 74:2066-2069
2. Amar JG, Family F, Popescu MN (2002) Kinetics of submonolayer growth. Comp Phys Commun 146:1-8
3. Avery AR, Dobbs HT, Holmes DM, Joyce BA, Vvedensky DD (1997) Nucleation and growth of islands on. GaAs surfaces. Phys Rev Lett 79:3938-3941
4. Bansal B, Gokhale MR, Bhattacharya A, Arora BM (2005) Growth kinetics effects on self-assembled InAs/InP quantum dots. Appl Phys Lett 87:203104
5. Bartelt MC, Evans JW (1992) Scaling analysis of diffusion-mediated island growth in surface adsorption processes. Phys Rev B 46:12675-12687
6. Bartelt MC, Tringides MC, Evans JW (1993) Island-size scaling in surface deposition processes. Phys Rev B 47:13891-13894
7. Bell GR, Krzyzewski TJ, Joyce PB, Jones TS (2000) Island size scaling for submonolayer growth of InAs on GaAs(001)-(294): strain and surface reconstruction effects. Phys Rev B 61:R10551
8. Bierwagen O, Masselink WT (2005) Self-organized growth of InAs quantum wires and dots on InP (001): the role of vicinal substrates. Appl Phys Lett 86:113110
9. Brinkmann M, Graff S, Biscarini F (2002) Mechanism of nonrandom pattern formation of polar-conjugated molecules in a partial wetting regime. Phys Rev B 66:165430
10. Cao YG, Xie MH, Liu Y, Xu SH, Ng YF, Wu HS, Tong SY (2003) Scaling of three-dimensional InN islands grown on GaN (0001) by molecular-beam epitaxy. Phys Rev B 68:161304(R)
11. Ebiko Y, Muto S, Suzuki D, Itoh S, Shiramine K, Haga T, Nakata Y, Yokoyama N (1998) Island size scaling in InAs/GaAs self-assembled quantum dots. Phys Rev Lett 80:2650-2653 (Pubitemid 128621633)
12. Ebiko Y, Muto S, Suzuki D, Itoh S, Yamakoshi H, Shiramine K, Haga T, Unno K, Ikeda M (1999) Scaling properties of InAs/GaAs self-assembled quantum dots. Phys Rev B 60:8234-8237
13. Johnson MC, Lee CJ, Courchesne EDB (2004) Growth and morphology of eV 0.80 photoemitting indium nitride nanowires. Appl Phys Lett 85:5670
14. Ke WC, Fu CP, Chen CY, Lee L, Ku CS, Chou WC, Chang WH, Lee MC, Chen WK (2006) Photoluminescence properties of self-assembled InN dots embedded in GaN grown by metal organic vapor phase epitaxy. Appl Phys Lett 88:191913
15. Krzyzewski TJ, Joyce PB, Bell GR, Jones TS (2002) Scaling behavior in InAs/GaAs (001) quantum-dot formation. Phys Rev B 66:201302
16. Matsuoka T, Okamoto H, Nakao M, Harima H, Kurimoto E (2002) Optical bandgap energy of wurtzite InN. Appl Phys Lett 81:1246 (Pubitemid 34963818)
17. Meixner M, Kunert R, Schöll E (2003) Control of strain-mediated growth kinetics of self-assembled semiconductor quantum dots. Phys Rev B 67:195301
18. Ng YF, Cao YG, Xie MH, Wang XL, Tong SY (2002) Growth mode and strain evolution during InN growth on GaN (0001) by molecular-beam epitaxy. Appl Phys Lett 81:3960
19. Pimpinelli A, Einstein TL (2007) Capture-zone scaling in island nucleation: universal fluctuation behavior. Phys Rev Lett 99:226102
20. Wu J, Walukiewicz W, Yu KM, Ager JW, Haller EE, Lu H, Schaff WJ, Saito Y, Nanishi Y (2002) Unusual properties of the fundamental band gap of InN. Appl Phys Lett 80:3967 (Pubitemid 34638109)