Near-infrared photoluminescence of vertically aligned InN nanorods grown on Si(111) by plasma-assisted molecular-beam epitaxy

Thin Solid Films

Volumn 515, Issue 3, 2006, Pages 961-966

  Chen, H Y ^a   Shen, C H ^a   Lin, H W ^a   Chen, C H ^a   Wu, C Y ^a   Gwo, S ^a   Davydov, V Yu ^b   Klochikhin, A A ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

Indium nitride (InN); Molecular beam epitaxy; Nanorods; Photoluminescence; Raman scattering; Silicon

Indexed keywords

CRYSTAL GROWTH; INDIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SILICON;

ELECTRON ACCUMULATION EFFECT; GROWTH TEMPERATURES; INDIUM NITRIDE (INN); STRUCTURAL DISORDER;

NANOSTRUCTURED MATERIALS;

EID: 33750480895     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.07.086     Document Type: Article

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