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Volumn 24, Issue 9, 2012, Pages 1619-1628

Ultra-low-temperature epitaxy of ge-based semiconductors and optoelectronic structures on Si(100): Introducing higher order germanes (Ge 3H 8, Ge 4H 10)

Author keywords

Ge on Si; GeSn alloys; IR optoelectonics; tetragermane; trigermane

Indexed keywords

ALLOY FILM; BULK-LIKE; CRYSTALLINITIES; DEVICE APPLICATION; DEVICE DESIGN; EASE-OF-USE; EMITTERS AND DETECTORS; GERMANES; GOOD STABILITY; HIGH GROWTH RATE; HIGHER ORDER; INDUSTRY STANDARDS; LOW TEMPERATURE PROCESSING; LOW TEMPERATURES; OPTICAL QUALITIES; OPTO-ELECTRONIC STRUCTURES; PHOTONIC APPLICATION; PROOF OF CONCEPT; QUANTUM-CHEMICAL SIMULATIONS; SI WAFER; SI(1 0 0); SI-BASED; SPECTROSCOPIC METHOD; STABLE ISOMERS; TETRAGERMANE; TRIGERMANE;

EID: 84860729604     PISSN: 08974756     EISSN: 15205002     Source Type: Journal    
DOI: 10.1021/cm3002404     Document Type: Article
Times cited : (38)

References (31)
  • 23
    • 84860773603 scopus 로고    scopus 로고
    • U.S. Patent Application US 2008/0175784 A1; Pub. Date: Jul. 24.
    • Boourasseau, C. U.S. Patent Application US 2008/0175784 A1; Pub. Date: Jul. 24, 2008.
    • (2008)
    • Boourasseau, C.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.