Synthesis and materials properties of sn/p-doped ge on si(100): Photoluminescence and prototype devices

Chemistry of Materials

Volumn 23, Issue 20, 2011, Pages 4480-4486

  Beeler, Richard T ^a   Grzybowski, Gordon J ^a   Roucka, Radek ^a   Jiang, Liying ^a   Mathews, Jay ^a   Smith, David J ^a   Menéndez, José ^a   Chizmeshya, Andrew V G ^a   Kouvetakis, John ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

Author keywords

Ge; GeSn alloys; IR optoelectonics; photodetectors; Sn doped Ge

Indexed keywords

DEVICE PROPERTIES; DEVICE QUALITY; EMISSION WAVELENGTH; GE FILMS; GESN ALLOYS; GROWTH MECHANISMS; HETEROSTRUCTURE PHOTODETECTORS; HIGH QUALITY; LOW TEMPERATURES; N-DOPING; OPTICAL QUALITIES; OPTOELECTRONIC APPLICATIONS; PL INTENSITY; PROTOTYPE DEVICES; SI (100) SUBSTRATE; SI(1 0 0); SMOOTH LAYER; SN-DOPED; STATE OF THE ART; THREADING DEFECTS; TRACE AMOUNTS;

CHEMICAL VAPOR DEPOSITION; GERMANIUM; IMPURITIES; OPTOELECTRONIC DEVICES; PHOTODETECTORS; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; TIN;

MATERIALS PROPERTIES;

EID: 80054737686     PISSN: 08974756     EISSN: 15205002     Source Type: Journal    
DOI: 10.1021/cm201648x     Document Type: Article

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