Ultrahigh growth rate of epitaxial silicon by chemical vapor deposition at low temperature with neopentasilane

Applied Physics Letters

Volumn 92, Issue 11, 2008, Pages

  Chung, K H ^a   Yao, N ^a   Benziger, J ^a   Sturm, J C ^a   Singh, K K ^b   Carlson, D ^b   Kuppurao, S ^b  

^a Princeton University   (United States)

^b APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CONCENTRATION (PROCESS); EPITAXIAL GROWTH; SEMICONDUCTOR DOPING; SILICON;

DOPANT CONCENTRATION; NEOPENTASILANE; SECONDARY-ION-MASS SPECTROSCOPY;

EPITAXIAL FILMS;

EID: 41049091950     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2897325     Document Type: Article

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