SCOPUS 정보 검색 플랫폼

Volumn 111, Issue 8, 2012, Pages

Resistive switching behavior in diamond-like carbon films grown by pulsed laser deposition for resistance switching random access memory application

(10) Peng, Pinggang a Xie, Dan a Yang, Yi a Zang, Yongyuan b Gao, Xili a Zhou, Changjian a Feng, Tingting a Tian, He a Ren, Tianling a Zhang, Xiaozhong a

a TSINGHUA UNIVERSITY (China)

b MCGILL UNIVERSITY (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT MECHANISMS; DATA RETENTION TIME; HIGH-RESISTANCE STATE; LOW-RESISTANCE STATE; MEMORY PERFORMANCE; METAL FILAMENTS; NITROGEN DOPED DIAMOND-LIKE CARBON; NON-VOLATILE; ON/OFF RATIO; OPERATION VOLTAGE; PULSED-LASER DEPOSITION TECHNIQUE; RANDOM ACCESS MEMORIES; RESISTANCE SWITCHING; RESISTIVE MEMORIES; RESISTIVE SWITCHING BEHAVIORS; SPACE CHARGE LIMITED CONDUCTION; TITANIUM ION;

CARBON FILMS; TITANIUM;

PULSED LASER DEPOSITION;

EID: 84860524655 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3703063 Document Type: Article

Times cited : (34)

References (29)

1
- 41149099157
- 10.1126/science.1153909
- G. I. Meijer, Science 319, 1625 (2008). 10.1126/science.1153909
- (2008) Science , vol.319 , pp. 1625
- Meijer, G.I.¹

2
- 67650102619
- 10.1002/adma.200900375
- R. Waser, R. Dittmann, G. Staikov, and K. Szot, Adv. Mater. 21, 2632 (2009). 10.1002/adma.200900375
- (2009) Adv. Mater. , vol.21 , pp. 2632
- Waser, R.¹ Dittmann, R.² Staikov, G.³ Szot, K.⁴

3
- 36549083365
- 10.1002/adma.200700251
- M. J. Lee, Y. Park, D. S. Suh, E. H. Lee, S. Seo, D. C. Kim, R. Jung, B. S. Kang, S. E. Ahn, C. B. Lee, D. H. Seo, Y. K. Cha, I. K. Yoo, J. S. Kim, and B. H. Park, Adv. Mater. 19, 3919 (2007). 10.1002/adma.200700251
- (2007) Adv. Mater. , vol.19 , pp. 3919
- Lee, M.J.¹ Park, Y.² Suh, D.S.³ Lee, E.H.⁴ Seo, S.⁵ Kim, D.C.⁶ Jung, R.⁷ Kang, B.S.⁸ Ahn, S.E.⁹ Lee, C.B.¹⁰ Seo, D.H.¹¹ Cha, Y.K.¹² Yoo, I.K.¹³ Kim, J.S.¹⁴ Park, B.H.¹⁵

4
- 65249125383
- 10.1021/nl900006g
- Y. C. Yang, F. Pan, Q. Liu, M. Liu, and F. Zeng, Nano Lett. 9, 1636 (2009). 10.1021/nl900006g
- (2009) Nano Lett. , vol.9 , pp. 1636
- Yang, Y.C.¹ Pan, F.² Liu, Q.³ Liu, M.⁴ Zeng, F.⁵

5
- 84860535847
- F. Kreupl, R. Bruchhaus, P. Majewski, J. Philipp, R. Symanczyk, T. Happ, C. Arndt, M. Vogt, R. Zimmermann, A. Buerke, A. Graham, and M. Kund, Technical Digest of IEEE International Electron Devices Meeting, p. 521 (2008).
- (2008) Technical Digest of IEEE International Electron Devices Meeting , pp. 521
- Kreupl, F.¹ Bruchhaus, R.² Majewski, P.³ Philipp, J.⁴ Symanczyk, R.⁵ Happ, T.⁶ Arndt, C.⁷ Vogt, M.⁸ Zimmermann, R.⁹ Buerke, A.¹⁰ Graham, A.¹¹ Kund, M.¹²

6
- 56749105604
- 10.1038/nmat2331
- Y. B. Li, A. Sinitskii, and J. M. Tour, Nature Mater. 7, 966 (2008). 10.1038/nmat2331
- (2008) Nature Mater. , vol.7 , pp. 966
- Li, Y.B.¹ Sinitskii, A.² Tour, J.M.³

7
- 70349556163
- 10.1021/nn9006225
- A. Sinitskii and J. M. Tour, ACS Nano 3, 2760 (2009). 10.1021/nn9006225
- (2009) ACS Nano , vol.3 , pp. 2760
- Sinitskii, A.¹ Tour, J.M.²

8
- 79251545182
- 10.1088/1367-2630/13/1/013020
- A. Sebastian, A. Pauza, C. Rossel, R. M. Shelby, A. F. Rodrguez, H. Pozidis, and E. Eleftheriou, New J. Phys. 13, 013020 (2011). 10.1088/1367-2630/13/1/013020
- (2011) New J. Phys. , vol.13 , pp. 013020
- Sebastian, A.¹ Pauza, A.² Rossel, C.³ Shelby, R.M.⁴ Rodrguez, A.F.⁵ Pozidis, H.⁶ Eleftheriou, E.⁷

9
- 56749178016
- 10.1021/nl801774a
- B. Standley, W. Z. Bao, H. Zhang, J. Bruck, C. N. Lau, and M. Bockrath, Nano Lett. 8, 3345 (2008). 10.1021/nl801774a
- (2008) Nano Lett. , vol.8 , pp. 3345
- Standley, B.¹ Bao, W.Z.² Zhang, H.³ Bruck, J.⁴ Lau, C.N.⁵ Bockrath, M.⁶

10
- 77951837588
- 10.1063/1.3406121
- F. Zhuge, W. Dai, C. He, A. Wang, Y. Liu, M. Li, Y. Wu, P. Cui, and R. Li, Appl. Phys. Lett. 96, 163505 (2010). 10.1063/1.3406121
- (2010) Appl. Phys. Lett. , vol.96 , pp. 163505
- Zhuge, F.¹ Dai, W.² He, C.³ Wang, A.⁴ Liu, Y.⁵ Li, M.⁶ Wu, Y.⁷ Cui, P.⁸ Li, R.⁹

11
- 71949128933
- 10.1063/1.3271177
- C. L. He, F. Zhuge, X. F. Zhou, M. Li, Y. W. Liu, J. Z. Wang, B. Chen, Z. P. Liu, Y. H. Wu, P. Cui, and R. W. Li, Appl. Phys. Lett. 95, 232101 (2009). 10.1063/1.3271177
- (2009) Appl. Phys. Lett. , vol.95 , pp. 232101
- He, C.L.¹ Zhuge, F.² Zhou, X.F.³ Li, M.⁴ Liu, Y.W.⁵ Wang, J.Z.⁶ Chen, B.⁷ Liu, Z.P.⁸ Wu, Y.H.⁹ Cui, P.¹⁰ Li, R.W.¹¹

12
- 77149125544
- 10.1088/0957-4484/21/10/105204
- Y. J. Doh and G. C. Yi, Nanotechnology 21, 105204 (2010). 10.1088/0957-4484/21/10/105204
- (2010) Nanotechnology , vol.21 , pp. 105204
- Doh, Y.J.¹ Yi, G.C.²

13
- 78649342005
- 10.1088/0256-307X/27/9/098102
- D. Fu, D. Xie, C. H. Zhang, D. Zhang, J. B. Niu, H. Qian, and L. T. Liu, Chin. Phys. Lett. 27, 098102 (2010). 10.1088/0256-307X/27/9/098102
- (2010) Chin. Phys. Lett. , vol.27 , pp. 098102
- Fu, D.¹ Xie, D.² Zhang, C.H.³ Zhang, D.⁴ Niu, J.B.⁵ Qian, H.⁶ Liu, L.T.⁷

14
- 79957590008
- 10.1109/LED.2011.2132750
- D. Fu, D. Xie, T. T. Feng, C. H. Zhang, J. B. Niu, H. Qian, and L. T. Liu, IEEE Electron Device Lett. 6, 803 (2011). 10.1109/LED.2011.2132750
- (2011) IEEE Electron Device Lett. , vol.6 , pp. 803
- Fu, D.¹ Xie, D.² Feng, T.T.³ Zhang, C.H.⁴ Niu, J.B.⁵ Qian, H.⁶ Liu, L.T.⁷

15
- 0035882062
- 10.1103/PhysRevB.64.075414
- A. C. Ferrari and J. Robertson, Phys. Rev. B 64, 075414 (2001). 10.1103/PhysRevB.64.075414
- (2001) Phys. Rev. B , vol.64 , pp. 075414
- Ferrari, A.C.¹ Robertson, J.²

16
- 0032486037
- 10.1016/S0257-8972(98)00475-7
- B. K. Tay, X. Shi, H. S. Tan, H. S. Yang, and Z. Sun, Surf. Coat. Technol. 105, 155 (1998). 10.1016/S0257-8972(98)00475-7
- (1998) Surf. Coat. Technol. , vol.105 , pp. 155
- Tay, B.K.¹ Shi, X.² Tan, H.S.³ Yang, H.S.⁴ Sun, Z.⁵

17
- 58149268896
- 10.1063/1.3032896
- Y. H. Do, J. S. Kwak, J. P. Hong, K. Jung, and H. Im, J. Appl. Phys. 104, 114512 (2008). 10.1063/1.3032896
- (2008) J. Appl. Phys. , vol.104 , pp. 114512
- Do, Y.H.¹ Kwak, J.S.² Hong, J.P.³ Jung, K.⁴ Im, H.⁵

18
- 0004206649
- (Academic, New York).
- A. Lampert and P. Mark, Current Injection in Solids (Academic, New York, 1970).
- (1970) Current Injection in Solids
- Lampert, A.¹ Mark, P.²

19
- 38049094920
- 10.1063/1.2832660
- Q. Liu, W. H. Guan, S. B. Long, R. Jia, M. Liu, and J. N. Chen, Appl. Phys. Lett. 92, 012117 (2008). 10.1063/1.2832660
- (2008) Appl. Phys. Lett. , vol.92 , pp. 012117
- Liu, Q.¹ Guan, W.H.² Long, S.B.³ Jia, R.⁴ Liu, M.⁵ Chen, J.N.⁶

20
- 33846984225
- 10.1063/1.2437668
- K. Jung, H. Seo, Y. Kim, H. Im, J. Hong, J. W. Park, and J. K. Lee, Appl. Phys. Lett. 90, 052104 (2007). 10.1063/1.2437668
- (2007) Appl. Phys. Lett. , vol.90 , pp. 052104
- Jung, K.¹ Seo, H.² Kim, Y.³ Im, H.⁴ Hong, J.⁵ Park, J.W.⁶ Lee, J.K.⁷

21
- 33846024379
- 10.1109/LED.2006.887640
- Z. Wang, P. Griffin, J. McVittie, S. Wong, P. McIntyre, and Y. Nishi, IEEE Electron Device Lett. 28, 14 (2007). 10.1109/LED.2006.887640
- (2007) IEEE Electron Device Lett. , vol.28 , pp. 14
- Wang, Z.¹ Griffin, P.² McVittie, J.³ Wong, S.⁴ McIntyre, P.⁵ Nishi, Y.⁶

22
- 35748974883
- 10.1038/nmat2023
- R. Waser and M. Aono, Nature Mater. 6, 33 (2007). 10.1038/nmat2023
- (2007) Nature Mater. , vol.6 , pp. 33
- Waser, R.¹ Aono, M.²

23
- 77951064806
- 10.1021/nl9042906
- K. Nagashima, T. Yanagida, K. Oka, M. Taniguchi, T. Kawai, J. S. Kim, and B. H. Park, Nano Lett. 10, 1359 (2010). 10.1021/nl9042906
- (2010) Nano Lett. , vol.10 , pp. 1359
- Nagashima, K.¹ Yanagida, T.² Oka, K.³ Taniguchi, M.⁴ Kawai, T.⁵ Kim, J.S.⁶ Park, B.H.⁷

24
- 65149104934
- 10.1088/0957-4484/20/17/175704
- J. Choi, J. Song, K. Jung, Y. Kim, H. Im, W. Jung, H. Kim, Y. H. Do, J. S. Kwak, and J. Hong, Nanotechnology 20, 175704 (2009). 10.1088/0957-4484/20/17/ 175704
- (2009) Nanotechnology , vol.20 , pp. 175704
- Choi, J.¹ Song, J.² Jung, K.³ Kim, Y.⁴ Im, H.⁵ Jung, W.⁶ Kim, H.⁷ Do, Y.H.⁸ Kwak, J.S.⁹ Hong, J.¹⁰

25
- 77956219362
- 10.1063/1.3399152
- Y. C. Yang, C. Chen, F. Zeng, and F. Pan, J. Appl. Phys. 107, 093701 (2010). 10.1063/1.3399152
- (2010) J. Appl. Phys. , vol.107 , pp. 093701
- Yang, Y.C.¹ Chen, C.² Zeng, F.³ Pan, F.⁴

26
- 76649133422
- 10.1038/nnano.2009.456
- D. H. Kwon, K. M. Kim, J. H. Jang, J. M. Jeon, M. H. Lee, G. H. Kim, X. S. Li, G. S. Park, B. Lee, S. Han, M. Kim, and C. S. Hwang, Nat. Nanotechnol. 5, 148 (2010). 10.1038/nnano.2009.456
- (2010) Nat. Nanotechnol. , vol.5 , pp. 148
- Kwon, D.H.¹ Kim, K.M.² Jang, J.H.³ Jeon, J.M.⁴ Lee, M.H.⁵ Kim, G.H.⁶ Li, X.S.⁷ Park, G.S.⁸ Lee, B.⁹ Han, S.¹⁰ Kim, M.¹¹ Hwang, C.S.¹²

27
- 40449092679
- 10.1021/nl073225h
- S. H. Jo and W. Lu, Nano Lett. 8, 392 (2008). 10.1021/nl073225h
- (2008) Nano Lett. , vol.8 , pp. 392
- Jo, S.H.¹ Lu, W.²

28
- 60749127336
- 10.1063/1.3077310
- C. Schindler, G. Staikov, and R. Waser, Appl. Phys. Lett. 94, 072109 (2009). 10.1063/1.3077310
- (2009) Appl. Phys. Lett. , vol.94 , pp. 072109
- Schindler, C.¹ Staikov, G.² Waser, R.³

29
- 70350570507
- 10.1016/j.ijrmhm.2009.08.003
- C. A. Charitidis, Int. J. Refract. Met. Hard Mater. 28, 51 (2010). 10.1016/j.ijrmhm.2009.08.003
- (2010) Int. J. Refract. Met. Hard Mater. , vol.28 , pp. 51
- Charitidis, C.A.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.