Preparation and characteristics of nanoscale diamond-like carbon films for resistive memory applications

Chinese Physics Letters

Volumn 27, Issue 9, 2010, Pages

  Fu, Di ^a,b   Xie, Dan ^a,b   Zhang, Chen Hui ^a   Zhang, Di ^a,b   Niu, Jie Bin ^c   Qian, He ^a,b   Liu, Li Tian ^a,b  

^a TSINGHUA UNIVERSITY   (China)

^b TSINGHUA NATIONAL LABORATORY FOR INFORMATION SCIENCE AND TECHNOLOGY   (China)

^c INSTITUTE OF MICROELECTRONICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON FILMS; NANOTECHNOLOGY; SWITCHING; VACUUM APPLICATIONS;

BISTABLES; DIAMOND LIKE CARBON; DIAMOND-LIKE CARBON FILM; FILTERED CATHODIC VACUUM ARC TECHNIQUES; MEMORY APPLICATIONS; NANOSCALE DIAMOND; NON-VOLATILE-MEMORY APPLICATIONS; RESISTANCE CHANGE; RESISTIVE MEMORY; RESISTIVE SWITCHING;

FILM PREPARATION;

EID: 78649342005     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/27/9/098102     Document Type: Article

References (21)

1. Zhuang W W et al 2002 IEDM Tech. Digest 193
2. Baek I G et al 2004 IEDM Tech. Digest 587
3. Chen A et al 2005 IEDM Tech. Digest 746
4. Choi B J et al 2005 J. Appl. Phys. 98 033715
5. Sim H et al 2005 IEEE Electron Device Lett. 26 292
6. Lv H B et al 2008 Chin. Phys. Lett. 25 1087
7. Liu S Q, Wu N J and Ignatiev A 2000 Appl. Phys. Lett. 76 2749
8. Dong R et al 2004 Appl. Phys. A: Mater. Sci. Process. 80 13
9. Beck A et al 2000 Appl. Phys. Lett. 77 139
10. Echtermeyer T J et al 2008 IEEE Electron Device Lett. 29 952
11. Sinitskii A and Tour J M 2009 ACS Nano 3 2760
12. Kreupl F et al 2008 IEDM Tech. Digest 521
13. Guan X et al 2009 IEDM Tech. Digest 905
14. Ferrari A C and Robertson J 2000 Phys.Rev.B 61 14095
15. Ferrari A C and Robertson J 2001 Phys.Rev.B 64 075414
16. Tay B K et al 1998 Surf. Coat.Technol. 105 155
17. Zhong M et al 2009 Appl. Surf. Sci. 256 322
18. Bai S Y et al 2009 Chin. Phys. Lett. 26 076601
19. Huang J Y et al 2006 Nano Lett. 6 1699
20. Evtukh A et al 2006 Semicond. Sci.Technol. 21 1326
21. Takai K et al 2003 Phys.Rev.B 67 214202