Complete parameterization of the dielectric function of microcrystalline silicon fabricated by plasma-enhanced chemical vapor deposition

Journal of Applied Physics

Volumn 111, Issue 8, 2012, Pages

  Yuguchi, Tetsuya ^a   Kanie, Yosuke ^a   Matsuki, Nobuyuki ^a   Fujiwara, Hiroyuki ^a  

^a GIFU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI:H; CRITICAL POINTS; DIELECTRIC FUNCTIONS; HARMONIC OSCILLATORS; HYDROGENATED AMORPHOUS SILICON (A-SI:H); LAYER THICKNESS; PARAMETERIZATION SCHEMES; PARAMETERIZED; REAL TIME SPECTROSCOPIC ELLIPSOMETRY; STRUCTURAL FACTOR; STRUCTURAL VARIATIONS;

CHEMICAL VAPOR DEPOSITION; GRAIN BOUNDARIES; MICROSTRUCTURE; PARAMETERIZATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; SPECTROSCOPIC ELLIPSOMETRY; VAPORS;

SILICON;

EID: 84860510316     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4704158     Document Type: Article

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