High-rate plasma process for microcrystalline silicon: Over 9% efficiency single junction solar cells

Materials Research Society Symposium Proceedings

Volumn 808, Issue , 2004, Pages 557-568

  Matsui, Takuya ^a   Matsuda, Akihisa ^a   Kondo, Michio ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; OXIDATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROMETRY; SILICON; SOLAR CELLS;

DEPOSITION PRESSURE; DEPOSITION RATE; MICROCRYSTALLINE SILICON; SINGLE JUNCTION SOLAR CELLS;

PLASMAS;

EID: 12844277517     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-808-a8.1     Document Type: Conference Paper

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