High-precision characterization of textured a-Si:H/SnO2:F structures by spectroscopic ellipsometry

Journal of Applied Physics

Volumn 110, Issue 7, 2011, Pages

  Akagawa, Masataka ^a   Fujiwara, Hiroyuki ^a  

^a GIFU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI:H; ANALYSIS METHOD; HIGH-PRECISION; HYDROGENATED AMORPHOUS SILICON (A-SI:H); INTERFACE LAYER; MULTILAYER MODELS; NONDESTRUCTIVE CHARACTERIZATION; OPTICAL MODELS; OPTICAL RESPONSE; STRUCTURAL CHARACTERIZATION;

CHARACTERIZATION; OPTICAL MULTILAYERS; SILICON; SPECTROSCOPIC ANALYSIS; SPECTROSCOPIC ELLIPSOMETRY; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY;

AMORPHOUS SILICON;

EID: 80054987124     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3646521     Document Type: Article

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