Diffusion barrier integrity evaluation by ellipsometric porosimetry

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 1 SPEC., 2003, Pages 220-226

  Shamiryan, D ^a,b   Baklanov, M R ^a   Maex, K ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CONDENSATION; CRYSTAL DEFECTS; DIELECTRIC FILMS; DIFFUSION; ELECTRIC RESISTANCE; OPTICAL PROPERTIES; PERMITTIVITY; POROSIMETERS; POSITRON ANNIHILATION SPECTROSCOPY;

ATOMIC LAYER DEPOSITED; COPPER WIRING; DIFFUSION BARRIER INTEGRITY EVALUATION; ELLIPSOMETRIC POROSIMETRY;

ELLIPSOMETRY;

EID: 0037233354     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1539067     Document Type: Article

References (7)

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