Selective chemical vapor deposition of manganese self-aligned capping layer for cu interconnections in microelectronics

Journal of the Electrochemical Society

Volumn 157, Issue 6, 2010, Pages

  Au, Yeung ^a   Lin, Youbo ^a   Kim, Hoon ^a,b   Beh, Eugene ^a,c   Liu, Yiqun ^a   Gordon, Roy G ^a  

^a HARVARD UNIVERSITY   (United States)

^b APPLIED MATERIALS INC   (United States)

^c STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; BINDING STRENGTH; CAPPING LAYER; CAPPING PROCESS; CHEMICAL VAPOR DEPOSITED; COPPER INTERCONNECTION; COPPER SURFACE; CVD PROCESS; DIELECTRIC CAPPING MATERIAL; DIELECTRIC INSULATORS; EARLY FAILURE; ENERGY INCREASE; INSULATOR SURFACES; MOLECULAR HYDROGEN; SELF-ALIGNED; VAPOR MIXTURE;

COPPER; COPPER DEPOSITS; DIELECTRIC MATERIALS; MANGANESE; MANGANESE COMPOUNDS; MICROELECTRONICS; SILICON COMPOUNDS; SURFACES; VAPORS;

CHEMICAL VAPOR DEPOSITION;

EID: 77958534770     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3364799     Document Type: Article

References (20)

1. C. S. Hau-Riege, Microelectron. Reliab. MCRLAS 0026-2714, 44, 195 (2004). 10.1016/j.microrel.2003.10.020
2. C. -K. Hu, L. M. Gignac, E. Liniger, C. Detavernier, S. G. Malhotra, and A. Simon, J. Appl. Phys. JAPIAU 0021-8979, 98, 124501 (2005). 10.1063/1.2140872 (Pubitemid 43032140)
3. P. Singer, Semicond. Int. SITLDD 0163-3767, http://www.semiconductor.net/ article/199242 (2005).
4. E. Nakazawa, K. Arita, Y. Tsuchiya, Y. Kakuhara, S. Yokogawa, T. Kurokawa, N. Sasaki, S. Ganguli, H. C. Ha, W. T. Lee, in Advanced Metallization Conference 2008 XXIV, p. 419 (2008).
5. C. -K. Hu, L. Gignac, and R. Rosenberg, Microelectron. Reliab. MCRLAS 0026-2714, 46, 213 (2006). 10.1016/j.microrel.2005.05.015 (Pubitemid 43106926)
6. J. Iijima, Y. Fujii, K. Neishi, and J. Koike, J. Vac. Sci. Technol. B JVTBD9 1071-1023, 27, 1963 (2009). 10.1116/1.3179167
7. K. Suzuki, U.S. Pat. Appl. 2009/0065939 (2009).
8. M. W. Lane, E. G. Liniger, and J. R. Lloyd, J. Appl. Phys. JAPIAU 0021-8979, 93, 1417 (2003). 10.1063/1.1532942
9. B. S. Lim, A. Rahtu, J. -S. Park, and R. G. Gordon, Inorg. Chem. INOCAJ 0020-1669, 42, 7951 (2003). 10.1021/ic0345424
10. Z. Li, S. T. Barry, and R. G. Gordon, Inorg. Chem. INOCAJ 0020-1669, 44, 1728 (2005). 10.1021/ic048492u (Pubitemid 40431467)
11. F. Deyhimi and J. A. Coles, Helv. Chim. Acta HCACAV 0018-019X, 65, 1752 (1982). 10.1002/hlca.19820650610
12. J. Farkas, M. J. Hampden-Smith, and T. T. Kodas, J. Electrochem. Soc. JESOAN 0013-4651, 141, 3547 (1994). 10.1149/1.2059368
13. R. H. Dauskardt, M. Lane, Q. Ma, and N. Krishna, Eng. Fract. Mech. EFMEAH 0013-7944, 61, 141 (1998). 10.1016/S0013-7944(98)00052-6 (Pubitemid 29111653)
14. M. Lane and R. H. Dauskardt, J. Mater. Res. JMREEE 0884-2914, 15, 2758 (2000). 10.1557/JMR.2000.0395
15. Y. Lin, J. J. Vlassak, T. Y. Tsui, and A. J. McKerrow, Mater. Res. Soc. Symp. Proc. MRSPDH 0272-9172, 795, 93 (2004).
16. D. Hausmann, J. Becker, S. Wang, and R. G. Gordon, Science SCIEAS 0036-8075, 298, 402 (2002). 10.1126/science.1073552 (Pubitemid 35189565)
17. A. Almazouzi, M. -P. Macht, V. Naundorf, and G. Neumann, Phys. Status Solidi A PSSABA 0031-8965, 167, 15 (1998). 10.1002/(SICI)1521-396X(199805)167: 1<15::AID-PSSA15>3.0.CO;2-8
18. R. G. Gordon, H. Kim, Y. Au, H. Wang, H. Bhandari, Y. Liu, D. K. Lee, and Y. Lin, in Advanced Metallization Conference 2008 XXIV, p. 321 (2008).
19. M. Haneda, J. Iijima, and J. Koike, Appl. Phys. Lett. APPLAB 0003-6951, 90, 252107 (2007). 10.1063/1.2750402 (Pubitemid 47141206)
20. J. Koike, M. Haneda, J. Iijima, and M. Wada, in IEEE International Interconnect Technology Conference, IEEE, p. 161 (2006).