Formation of a manganese oxide barrier layer with thermal chemical vapor deposition for advanced large-scale integrated interconnect structure

Applied Physics Letters

Volumn 93, Issue 3, 2008, Pages

  Neishi, Koji ^a   Aki, Shiro ^a   Matsumoto, Kenji ^b   Sato, Hiroshi ^b   Itoh, Hitoshi ^b   Hosaka, Shigetoshi ^b   Koike, Junichi ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b TOKYO ELECTRON LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION BARRIERS; ELECTRIC POWER SYSTEM INTERCONNECTION; FORMING; MANGANESE; MANGANESE COMPOUNDS; METALLIZING; OXIDES; SEMICONDUCTOR DOPING; SILICON; VAPORS;

AMERICAN INSTITUTE OF PHYSICS (AIP); BARRIER FORMATION; BARRIER LAYER (BL); CHEMICAL VAPOR DEPOSITION (CCVD); CHEMICAL VAPORS; DEPOSITION BEHAVIOR; DEPOSITION TEMPERATURE (TD); DIFFUSION BARRIER LAYER (DBL); DIFFUSION BARRIER PROPERTY; INTER-DIFFUSION; INTERCONNECT STRUCTURES; MANGANESE (IV) OXIDE; MN OXIDES; UNIFORM THICKNESS;

CHEMICAL VAPOR DEPOSITION;

EID: 48249136212     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2963984     Document Type: Article

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