Low resistive and highly reliable Cu dual-damascene interconnect technology using self-formed mnSi xO y barrier layer

Proceedings of the IEEE 2005 International Interconnect Technology Conference, IITC

Volumn , Issue , 2005, Pages 188-190

  Usui, T ^a   Nasu, H ^a   Koike, J ^b   Wada, M ^b   Takahashi, S ^a   Shimizu, N ^a   Nishikawa, T ^a   Yoshimaru, M ^a   Shibata, H ^a  

^a SEMICONDUCTOR TECHNOLOGY ACADEMIC RESEARCH CENTER   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADHESION STRENGTH; DUAL DAMASCENE;

CHEMICAL MECHANICAL POLISHING; COPPER; DIELECTRIC MATERIALS; ELECTROMIGRATION; FABRICATION; MICROSTRUCTURE; TRANSMISSION ELECTRON MICROSCOPY;

INTERCONNECTION NETWORKS;

EID: 28244497744     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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