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Volumn 49, Issue 5 PART 3, 2010, Pages

Effects of water desorption from SiO2 substrates on the thickness of manganese oxide diffusion barrier layer formed by chemical vapor deposition

(7) Matsumoto, Kenji a Neishi, Koji a,b Itoh, Hitoshi a Miyoshi, Hidenori a Sato, Hiroshi a Hosaka, Shigetoshi a Koike, Junichi a,b

a TOKYO ELECTRON LTD (Japan)

b TOHOKU UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORBED WATER; BARRIER LAYERS; DESORPTION BEHAVIOR; DIFFUSION BARRIER LAYERS; GOOD CORRELATIONS; PREANNEALING; REPRODUCIBILITIES; THICKNESS DEPENDENCE; WATER DESORPTION;

DESORPTION; DIFFUSION BARRIERS; MANGANESE; MANGANESE OXIDE; OXIDES; SILICON COMPOUNDS; SUBSTRATES; WATER VAPOR;

CHEMICAL VAPOR DEPOSITION;

EID: 77953143962 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.49.05FA12 Document Type: Article

Times cited : (9)

References (11)

1
- 23044522146
- S. M. Rossnagel, A. Sherman, and F. Turner: J. Vac. Sci. Technol. B 18 (2000) 2016.
- (2000) J. Vac. Sci. Technol. B , vol.18 , pp. 2016
- Rossnagel, S.M.¹ Sherman, A.² Turner, F.³

2
- 0942267575
- H. Kim: J. Vac. Sci. Technol. B 21 (2003) 2231.
- (2003) J. Vac. Sci. Technol. B , vol.21 , pp. 2231
- Kim, H.¹

3
- 62549152880
- K. Neishi, S. Aki, J. Iijima, and J. Koike: Mater. Res. Soc. Symp. Proc. 1079E (2008) N03-11.
- (2008) Mater. Res. Soc. Symp. Proc. , vol.1079 E
- Neishi, K.¹ Aki, S.² Iijima, J.³ Koike, J.⁴

4
- 48249136212
- K. Neishi, S. Aki, K. Matsumoto, H. Sato, H. Itoh, S. Hosaka, and J. Koike: Appl. Phys. Lett. 93 (2008) 032106.
- (2008) Appl. Phys. Lett. , vol.93 , pp. 032106
- Neishi, K.¹ Aki, S.² Matsumoto, K.³ Sato, H.⁴ Itoh, H.⁵ Hosaka, S.⁶ Koike, J.⁷

5
- 70349961370
- K. Neishi, K. Matsumoto, H. Sato, H. Itoh, S. Hosaka, and J. Koike: Proc. 14th Conf. AMC, 2009, p. 307.
- (2009) Proc. 14th Conf. AMC , pp. 307
- Neishi, K.¹ Matsumoto, K.² Sato, H.³ Itoh, H.⁴ Hosaka, S.⁵ Koike, J.⁶

6
- 70349952027
- R. G. Gordon, H. Kim, Y. Au, H. Wang, H. Bhandari, Y. Liu, D. K. Lee, and Y. Lin: Proc. 14th Conf. AMC, 2009, p. 321.
- (2009) Proc. 14th Conf. AMC , pp. 321
- Gordon, R.G.¹ Kim, H.² Au, Y.³ Wang, H.⁴ Bhandari, H.⁵ Liu, Y.⁶ Lee, D.K.⁷ Lin, Y.⁸

7
- 62549093609
- K. Matsumoto, K. Neishi, H. Itoh, H. Sato, S. Hosaka, and J. Koike: Appl. Phys. Express 2 (2009) 036503.
- (2009) Appl. Phys. Express , vol.2 , pp. 036503
- Matsumoto, K.¹ Neishi, K.² Itoh, H.³ Sato, H.⁴ Hosaka, S.⁵ Koike, J.⁶

8
- 5844290545
- Part 1, Proc. 6th int. Vacuum Congr., Kyoto, 1974
- E. Arai, Y. Terunuma, and C. Tadachi: Proc. 6th Int. Vacuum Congr., Kyoto, 1974, Jpn. J. Appl. Phys. 13 (1974) Suppl. 2, Part 1, p. 757.
- (1974) Jpn. J. Appl. Phys. , vol.13 , Issue.SUPPL. 2 , pp. 757
- Arai, E.¹ Terunuma, Y.² Tadachi, C.³

9
- 0027577183
- N. Hirashita, S. Tokitoh, and H. Uchida: Jpn. J. Appl. Phys. 32 (1993) 1787.
- (1993) Jpn. J. Appl. Phys. , vol.32 , pp. 1787
- Hirashita, N.¹ Tokitoh, S.² Uchida, H.³

10
- 0344362751
- Interconnect edition
- International Technology Roadmap for Semiconductors (2007) Interconnect edition, p. 7.
- (2007) International Technology Roadmap for Semiconductors , pp. 7

11
- 0001775166
- G. Wilkinson, F. A. Cotton, and J. M. Birmingham: J. Inorg. Nucl. Chem. 2 (1956) 95.
- (1956) J. Inorg. Nucl. Chem. , vol.2 , pp. 95
- Wilkinson, G.¹ Cotton, F.A.² Birmingham, J.M.³

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