Photoconductive Schottky diode based on Al/p-Si/SnS 2/Ag for optical sensor applications

Solar Energy

Volumn 86, Issue 5, 2012, Pages 1539-1545

  Gupta, R K ^a   Yakuphanoglu, F ^b,c  

^a NORTH CAROLINA A AND T STATE UNIVERSITY   (United States)

^b FIRAT UNIVERSITY   (Turkey)

^c KING SAUD UNIVERSITY   (Saudi Arabia)

Author keywords

Capacitance voltage; Current voltage; Photoresponse; Schottky diode; Sol gel; Tin disulfide

Indexed keywords

BARRIER HEIGHTS; CAPACITANCE VOLTAGE; CAPACITANCE VOLTAGE CHARACTERISTIC; CONTINUOUS DISTRIBUTION; CURRENT VOLTAGE; DIFFERENT FREQUENCY; IDEALITY FACTORS; JUNCTION PROPERTIES; PHOTORESPONSE; PHOTORESPONSES; REVERSE BIAS VOLTAGE; SCHOTTKY BARRIERS; SCHOTTKY DIODES; SENSOR APPLICATIONS; TRANSIENT PHOTOCURRENTS;

OPTICAL SENSORS; PHOTOCURRENTS; SCHOTTKY BARRIER DIODES; SOL-GEL PROCESS; SOL-GELS; TIN;

DIODES;

ALUMINUM; FREQUENCY ANALYSIS; GEL; OPTICAL METHOD; SILICON; SILVER; SULFIDE;

EID: 84859440268     PISSN: 0038092X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solener.2012.02.015     Document Type: Article

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