Van der Waals epitaxy of the layered semiconductors SnSe2 and SnS2: Morphology and growth modes

Surface Science

Volumn 385, Issue 1, 1997, Pages 1-14

  Schlaf, R ^a,c   Armstrong, N R ^b   Parkinson, B A ^c   Pettenkofer, C ^a   Jaegermann, W ^a  

^a HAHN MEITNER INSTITUT   (Germany)

^b University of Arizona   (United States)

^c Department of Environmental and Radiological Health Sciences   (United States)

Author keywords

Growth modes; Layered chalcogenides; Low energy electron diffraction; Molecular beam epitaxy; Photoelectron spectroscopy; Scanning tunnelling microscopy

Indexed keywords

DIFFUSION IN SOLIDS; LOW ENERGY ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PHOTOEMISSION; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTING TIN COMPOUNDS; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; SUBSTRATES; THERMAL EFFECTS; THERMODYNAMIC STABILITY;

VAN DER WAALS EPITAXY;

HETEROJUNCTIONS;

EID: 0031212074     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)00066-6     Document Type: Article

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