Analysis of electronic parameters and interface states of boron dispersed triethanolamine/p-Si structure by AFM, I-V, C-V-f and G/ω-V-f techniques

Microelectronic Engineering

Volumn 87, Issue 1, 2010, Pages 30-34

  Yakuphanoglu, Fahrettin ^a   Okur, Salih ^b  

^a FIRAT UNIVERSITY   (Turkey)

^b IZMIR INSTITUTE OF TECHNOLOGY   (Turkey)

Author keywords

Boron; Interfacial state density; Metal semiconductor contacts

Indexed keywords

AFM; BARRIER HEIGHTS; BORON PARTICLE; ELECTRONIC PARAMETERS; IDEALITY FACTORS; INTERFACE PROPERTY; INTERFACE STATE; INTERFACE STATE DENSITY; INTERFACIAL STATE DENSITY; IV CHARACTERISTICS; METAL/SEMICONDUCTOR CONTACTS; PHASE IMAGE; SERIES RESISTANCES; SI SUBSTRATES; TRIETHANOLAMINES;

ATOMIC FORCE MICROSCOPY; ATOMS; BORON; BORON COMPOUNDS; DIODES; PHASE INTERFACES; PHOTOELECTRIC DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SURFACE TOPOGRAPHY;

CRYSTAL ATOMIC STRUCTURE;

EID: 70350714135     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.05.012     Document Type: Article

References (21)

1. Campbell I.H., Rubin S., Zawodzinski T.A., Kress J.D., Martin R.L., and Smith D.L. Review B 54 (1996) 14321
2. Aydoǧan S., Saǧlam M., and Türüt A. Vacuum 77 (2005) 269
3. Vural O., Yi{dotless}ldi{dotless}ri{dotless}m N., Alti{dotless}ndal S., and Türüt A. Synthetic Metals 157 (2007) 679
4. Ki{dotless}li{dotless}çoǧlu T. Thin Solid Films 516 (2008) 967
5. Aydin M.E., Yakuphanoglu F., Eom J.-H., and Hwang D.-H. Physica B 387 (2007) 239
6. Ebeoǧlu M.A., Ki{dotless}li{dotless}çoǧlu T., and Aydi{dotless}n M.E. Physica B 395 (2007) 93
7. Aydin M.E., and Yakuphanoglu F. Journal of Physics and Chemistry of Solids 68 (2007) 1770
8. Yakuphanoglu F. Sensors and Actuators A 141 (2008) 383
9. Aydoǧan S., Saǧlam M., and Türüt A. Microelectronic Engineering 85 (2008) 278
10. Karataş S., Temirci C., Çakar M., and Türüt A. Applied Surface Science 252 (2006) 2209
11. Aydin M.E., Yakuphanoglu F., and Ki{dotless}li{dotless}çoǧlu T. Synthetic Metals 157 (2007) 1080
12. Çakar M., Yi{dotless}ldi{dotless}ri{dotless}m N., Doǧan H., and Türüt A. Applied Surface Science 253 (2007) 3464
13. Weissermel K., Arpe H.-J., Lindley C.R., and Hawkins S. Oxidation Products of Ethylene, Industrial Organic Chemistry (2003), Wiley-VCH Chapter 7
14. Sohoni S., Sridhar R., and Mandal G. Powder Technology 67 (1991) 277
15. Rhoderick E.H., and Williams R.H. Metal-Semiconductor Contacts (1988), Clerendon, Oxford
16. Cheung S.K., and Cheung N.W. Applied Physical Letters 49 (1986) 85
17. A. Donald, Neamen, Semiconductor Physics and Devices-Basic Principles, second ed., IrWin-McGraw-Hill, New York, 1997.
18. Sze S.M. Physics of Semiconductor Devices. second ed. (1981), Wiley, New York
19. Nicollian E.H., and Brews J.R. MOS (Metal Oxide Semiconductor), Physics and Technology (1982), Wiley, New York
20. Aydin M.E., and Yakuphanoglu F. Microelectronic Engineering 85 (2008) 1836
21. Çakar M., Onganer Y., and Türüt A. Synthetic Metals 126 (2002) 213