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Volumn 83, Issue 5, 2009, Pages 753-760

Growth, structural and optical properties of copper indium diselenide thin films deposited by thermal evaporation method

Author keywords

Atomic force microscopy; CuInSe2 thin film; Energy dispersive X ray analysis; Thermal evaporation; Transmission measurements; X ray diffraction

Indexed keywords

CHEMICAL CONSTITUENTS; COMPOUND MATERIALS; COPPER INDIUM DISELENIDE; CUINSE2 THIN FILM; DIFFERENT SUBSTRATES; ELECTRICAL CONDUCTIVITIES; ELECTRICAL RESISTIVITIES; ENERGY BAND GAPS; ENERGY DISPERSIVE X-RAY ANALYSIS; EXTINCTION CO-EFFICIENT; HALL-EFFECT MEASUREMENTS; NEAR STOICHIOMETRIC; OPTICAL ABSORPTION COEFFICIENTS; PREFERRED ORIENTATIONS; QUARTZ AMPOULES; SINGLE PHASE; SINGLE-SOURCE THERMAL EVAPORATION METHODS; SODA-LIME GLASS SUBSTRATES; STRUCTURAL AND OPTICAL PROPERTIES; SUBSTRATE TEMPERATURES; TEMPERATURE DEPENDENCES; THERMAL EVAPORATION METHODS; TRANSMISSION MEASUREMENTS; TRANSMISSION SPECTRUMS; WAVELENGTH RANGES;

EID: 63449110808     PISSN: 0038092X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solener.2008.11.006     Document Type: Article
Times cited : (35)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.