Tin monosulfide thin films grown by atomic layer deposition using tin 2,4-pentanedionate and hydrogen sulfide

Journal of Physical Chemistry C

Volumn 114, Issue 41, 2010, Pages 17597-17603

  Kim, Jay Yu ^a,b   George, Steven M ^a,c  

^a UNIVERSITY OF COLORADO   (United States)

^b NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^c UCB 450   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AIR EXPOSURE; ALD GROWTH; ATOMIC RATIO; BAND GAPS; BULK VALUE; FILM DENSITY; IN-SITU; MASS GAIN; MASS LOSS; MONOSULFIDE; OXYGEN IMPURITY; QCM SENSORS; ROOM TEMPERATURE; SITE BLOCKING; SUBSTRATE TEMPERATURE; SURFACE SPECIES; X RAY FLUORESCENCE; X-RAY REFLECTIVITY MEASUREMENTS;

ATOMIC LAYER DEPOSITION; ATOMIC SPECTROSCOPY; CRYSTAL IMPURITIES; DEPOSITION; GOLD DEPOSITS; GROWTH RATE; HYDROGEN; HYDROGEN SULFIDE; OXYGEN; QUARTZ; QUARTZ CRYSTAL MICROBALANCES; SOLAR POWER GENERATION; SUBSTRATES; SULFUR DETERMINATION; SURFACE CHEMISTRY; TIN; TITANIUM COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY; X RAYS;

ATOMS;

EID: 77957988441     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp9120244     Document Type: Article

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