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Volumn 110, Issue 11, 2011, Pages

Effect of annealing time on bias stress and light-induced instabilities in amorphous indium-gallium-zinc-oxide thin-film transistors

(4) Chowdhury, Md Delwar Hossain a Ryu, Sang Hyun a Migliorato, Piero a,b Jang, Jin a

a Kyung Hee University (South Korea)

b UNIVERSITY OF CAMBRIDGE (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS INDIUM GALLIUM ZINC OXIDES (A IGZO); AMORPHOUS NETWORKS; ANNEALING TIME; BENEFICIAL EFFECTS; BIAS STRESS; INDIUM GALLIUM ZINC OXIDES (IGZO); LOW-TEMPERATURE PROCESS; NEGATIVE BIAS; PLASTIC ELECTRONICS; POSITIVE BIAS; POST ANNEALING; STABLE CONFIGURATION; THIN FILM TRANSISTORS (TFT); THIN-FILM TRANSISTOR (TFTS); TIME CONSTANTS; TRANSFER CHARACTERISTICS;

GALLIUM; THIN FILM TRANSISTORS; ZINC;

INDIUM;

EID: 84859369212 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3662869 Document Type: Article

Times cited : (50)

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