P-41: Investigation of the photon-enhanced bias instability of InGaZnO TFTs for the application of transparent AM-OLED displays

Digest of Technical Papers - SID International Symposium

Volumn 41 1, Issue , 2010, Pages 1367-1369

  Ryu, Min Ki ^a   Park, Sang Hee Ko ^a   Yang, Shin Hyuk ^a   Byun, Chun Won ^a   Kwon, Oh Sang ^a   Park, Eun Suk ^a   Cho, Kyoung Ik ^a   Hwang, Chi Sun ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM COMPOUNDS; GATE DIELECTRICS; II-VI SEMICONDUCTORS; ORGANIC LIGHT EMITTING DIODES (OLED); PHOTONS; SEMICONDUCTING INDIUM COMPOUNDS; ZINC OXIDE;

BIAS INSTABILITY; HIGH FIELD EFFECT MOBILITY; HIGHLY STABLES; INDIUM GALLIUM ZINC OXIDES; INDUCED CHARGES; LIGHT-INDUCED; NEGATIVE BIAS; POSITIVE BIAS;

THIN FILM TRANSISTORS;

EID: 84863299722     PISSN: 0097966X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1889/1.3499954     Document Type: Conference Paper

References (4)

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2. S. Utsunomiya, S. Inoue, T. Shimoda, "Low-Temperature Poly-Si TFT Transferred onto Plastic Substrates by Using Surface Free Technology by Laser Ablation/Annealing," J. Soc. Info. Display 10, 69-73, (2002).
3. E. Lueder, Liquid Crystal Displays: Addressing Schemes and Electro-Optical Effects (Wiley, New York, 2001).
4. S.-H. K Park, C.-S Hwang, D.-H Cho, S. M. Yoon, S. Yang, C. Byun, M. K. Ryu, J.-I Lee, O. Kwon, W.-S Cheong, H. Y. Chu, K. I. Cho, 'Effect of channel/Insulator Interface Formation Process on the Oxide TFT Performance," SID Symposium Digest 15, 276-279, (2009)