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Journal of Applied Physics

Volumn 110, Issue 11, 2011, Pages

Dopant concentration imaging in crystalline silicon wafers by band-to-band photoluminescence

(5) Lim, S Y a Phang, S P a Trupke, T b Cuevas, A a MacDonald, D a

a AUSTRALIAN NATIONAL UNIVERSITY (Australia)

b UNIVERSITY OF NEW SOUTH WALES (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

BAND-TO-BAND PHOTOLUMINESCENCE; BORON CONCENTRATIONS; CRYSTALLINE SILICON WAFERS; DOPANT CONCENTRATIONS; EXCESS CARRIER CONCENTRATION; FORMATION RATES; IRON-ACCEPTOR PAIRS; P-TYPE WAFER; PHOTOLUMINESCENCE IMAGES; RELATIVE SENSITIVITY; SPATIALLY RESOLVED; SURFACE RECOMBINATIONS; TRANSIT TIME;

BORON; DOPING (ADDITIVES); PHOSPHORUS; PHOTOLUMINESCENCE;

SILICON WAFERS;

EID: 84859294998 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3664859 Document Type: Article

Times cited : (14)

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