Detecting efficiency-limiting defects in Czochralski-grown silicon wafers in solar cell production using photoluminescence imaging

Physica Status Solidi - Rapid Research Letters

Volumn 5, Issue 5-6, 2011, Pages 199-201

  Haunschild, Jonas ^a   Reis, Isolde E ^a   Geilker, Juliane ^a   Rein, Stefan ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

Czochralski silicon; Oxygen precipitates; Photoluminescence imaging; Solar cells

Indexed keywords

CELL PRODUCTION; CZOCHRALSKI SILICON; CZOCHRALSKI SILICON WAFERS; EFFICIENCY LOSS; INDUSTRIAL SOLAR CELLS; LIFETIME MEASUREMENTS; MULTICRYSTALLINE SILICON WAFERS; OXYGEN PRECIPITATES; PHOTOLUMINESCENCE IMAGES; PHOTOLUMINESCENCE IMAGING; PL IMAGE; PRODUCTION LINE;

DEFECTS; EFFICIENCY; OXYGEN; PHOTOLUMINESCENCE; POLYSILICON; QUALITY CONTROL; SEMICONDUCTING SILICON COMPOUNDS; SOLAR CELLS;

SILICON WAFERS;

EID: 79957720234     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201105183     Document Type: Article

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