Accurate measurement of the formation rate of iron-boron pairs in silicon

Semiconductor Science and Technology

Volumn 26, Issue 5, 2011, Pages

  Tan, J ^a   MacDonald, D ^a   Rougieux, F ^a   Cuevas, A ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR CONCENTRATIONS; ACCURATE MEASUREMENT; CRYSTALLINE SILICONS; EFFECTIVE LIFETIME; FORMATION RATES; IRON-ACCEPTOR PAIRS; P-TYPE; STATISTICAL ANALYSIS; TIME CONSTANTS;

BORON; IRON COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS;

BORON COMPOUNDS;

EID: 79953248215     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/26/5/055019     Document Type: Article

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