Recombination activity of iron-gallium and iron-indium pairs in silicon

Journal of Applied Physics

Volumn 97, Issue 11, 2005, Pages

  Schmidt, Jan ^a   MacDonald, Daniel ^b  

^a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE SILICON MATERIALS; IRON-INDIUM PAIRS; RECOMBINATION ACTIVITY; SOLAR CELL EFFICIENCY;

CRYSTALLINE MATERIALS; DEGRADATION; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRONS; GALLIUM; HALL EFFECT; MICROELECTRONICS; PARAMAGNETIC RESONANCE; SILICON WAFERS; SOLAR CELLS;

IRON;

EID: 20744454777     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1929096     Document Type: Article

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