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Volumn 110, Issue 10, 2011, Pages

Influence of source and drain contacts on the properties of the indium-zinc oxide thin-film transistors based on anodic aluminum oxide gate dielectrics

(10) Lan, Linfeng a,b Xu, Miao b Peng, Junbiao a,b Xu, Hua a Li, Min a Luo, Dongxiang a Zou, Jianhua b Tao, Hong b Wang, Lei a,b Yao, Rihui a

a SOUTH CHINA UNIVERSITY OF TECHNOLOGY (China)

b New Vision Opto Electronic Technology Co Ltd (China)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; ANODIC ALUMINUM OXIDE; DEPTH PROFILE; EFFECTIVE CHANNEL LENGTH; EFFECTIVE ELECTRON MOBILITY; GATE DIELECTRIC LAYERS; INDIUM ZINC OXIDES; OUTPUT CURRENT; SHORT-CHANNEL EFFECT; SOURCE AND DRAINS; SUBTHRESHOLD SWING;

ALUMINUM; ANODIC OXIDATION; DIELECTRIC MATERIALS; ELECTRODES; ELECTRON MOBILITY; INDIUM; OXIDES; THIN FILM TRANSISTORS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC; ZINC OXIDE;

GATE DIELECTRICS;

EID: 82555163325 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3660791 Document Type: Conference Paper

Times cited : (33)

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