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Volumn 44, Issue 45, 2011, Pages
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Gate bias stress stability under light irradiation for indium zinc oxide thin-film transistors based on anodic aluminium oxide gate dielectrics
a
a,b
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Author keywords
[No Author keywords available]
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Indexed keywords
ACTIVE LAYER;
ANODIC ALUMINIUM OXIDE;
GATE DIELECTRIC LAYERS;
GATE-BIAS STRESS;
INDIUM ZINC OXIDES;
LIGHT IRRADIATIONS;
NEGATIVE BIAS;
ON/OFF CURRENT RATIO;
POSITIVE BIAS;
STACKED STRUCTURE;
ALUMINUM;
ANODIC OXIDATION;
BIAS VOLTAGE;
DIELECTRIC MATERIALS;
ELECTRON MOBILITY;
GATES (TRANSISTOR);
INDIUM;
OXIDES;
SILICON COMPOUNDS;
THIN FILM TRANSISTORS;
ZINC;
ZINC OXIDE;
GATE DIELECTRICS;
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EID: 80055093330
PISSN: 00223727
EISSN: 13616463
Source Type: Journal
DOI: 10.1088/0022-3727/44/45/455102 Document Type: Article |
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Times cited : (21)
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References (15)
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