Reduction of grain-boundary potential barrier height in polycrystalline silicon with hot H2O-vapor annealing probed using point-contact devices

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 3, 2003, Pages 1000-1003

  Kamiya, Toshio ^a,d,e   Durrani, Zahid A K ^a,e   Ahmed, Haroon ^a,e   Sameshima, Toshiyuki ^b   Furuta, Yoshikazu ^a,e   Mizuta, Hiroshi ^a,e   Lloyd, Neil ^c  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

^c UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

^d TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^e JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL BONDS; GRAIN BOUNDARIES; OXIDATION; PERCOLATION (SOLID STATE); POLYCRYSTALLINE MATERIALS; THIN FILMS;

BARRIER HEIGHT;

SEMICONDUCTING SILICON;

EID: 0038374104     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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