A general approach for high yield fabrication of CMOS-compatible all-semiconducting carbon nanotube field effect transistors

Nanotechnology

Volumn 23, Issue 12, 2012, Pages

  Islam, Muhammad R ^a   Kormondy, Kristy J ^a   Silbar, Eliot ^a   Khondaker, Saiful I ^a,b  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

^b University of Central Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ASSEMBLY YIELDS; CARBON NANOTUBE DEVICES; CARBON NANOTUBE FET; CARBON NANOTUBE FIELD EFFECT TRANSISTORS; CMOS COMPATIBLE; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; CURRENT RATIOS; ELECTRODE PAIRS; GENERAL APPROACH; HIGH YIELD; ON-OFF RATIO; SWITCHING SPEED;

ELECTROPHORESIS; OPTIMIZATION;

MESFET DEVICES;

EID: 84858417663     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/12/125201     Document Type: Article

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