High yield assembly and electron transport investigation of semiconducting-rich local-gated single-walled carbon nanotube field effect transistors

Nanotechnology

Volumn 22, Issue 41, 2011, Pages

  Kormondy, Kristy J ^a   Stokes, Paul ^a   Khondaker, Saiful I ^a  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; DIRECTED ASSEMBLY; ELECTRON TRANSPORT; HIGH YIELD; LARGE-SCALE FABRICATION; NANOELECTRONIC DEVICES; ON/OFF CURRENT RATIO; SEMI-CONDUCTING NANOTUBES; SINGLE-WALLED CARBON NANOTUBE FIELD EFFECT TRANSISTORS; SUBTHRESHOLD SWING;

CARBON; DISPLAY DEVICES; ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; ELECTROPHORESIS; MESFET DEVICES; NANOELECTRONICS; SINGLE-WALLED CARBON NANOTUBES (SWCN); TRANSISTORS;

SINGLE ELECTRON TRANSISTORS;

EID: 80053229240     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/41/415201     Document Type: Article

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