Si exfoliation by MeV proton implantation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 277, Issue , 2012, Pages 93-97

  Braley, Carole ^a   Mazen, Frédéric ^a   Tauzin, Aurélie ^a   Rieutord, Franois ^b   Deguet, Chrystel ^a   Ntsoenzok, Esidor ^c  

^a CEA LETI   (France)

^b CEA GRENOBLE   (France)

^c CNRS CEMHTI   (France)

Author keywords

Blistering; Delamination; Implantation; Silicon; Smart Cut

Indexed keywords

3-D INTEGRATION; BLISTERING; DEFECTS EVOLUTION; FLUENCES; FRACTURE PROPAGATION; HYDROGEN CONCENTRATION; IMPLANTATION ENERGIES; LAYER SEPARATION; LOW ENERGY IMPLANTATION; NEW APPLICATIONS; PHOTOVOLTAIC; PROTON IMPLANTATION; SINGLE CRYSTALLINE SILICON; SMART-CUT; SUBSTRATE ORIENTATION; THICK LAYERS; THIN LAYERS; WAFER MANUFACTURING;

DEFECTS; DELAMINATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGEN; ION IMPLANTATION; MANUFACTURE; PROTONS; SEPARATION; SILICON; SUBSTRATES;

SILICON WAFERS;

EID: 84858337917     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2011.12.056     Document Type: Article

References (25)

1. M. Bruel Electron. Lett. 31 14 1995 1201
2. M. Bruel, B. Aspar, and A.-J. Auberton-Hervé Jpn. J. Appl. Phys. 36 1997 1636
3. F. Letertre, C. Deguet, B. Faure, C. Richtarch, J.-M. Hartmann, A. Chieux, A. Beaumont, F. Allibert, C. Morales, J. Dechamp, P. Perreau, S. Pocas, S. Personnic, C. Lagahe-Blanchard, B. Ghyselen, E. Le Vaillant, E. Jalaguier, N. Kernevez, and C. Mazure Mater. Res. Soc. 809 2004 153
4. E. Jalaguier, B. Aspar, S. Pocas, J.-F. Michaud, M. Zussy, A.-M. Papon, and M. Bruel Electron. Lett. 34 4 1998 408
5. L. Di Cioccio, Y. Le Tiec, F. Letertre, C. Jaussaud, and M. Bruel Electron. Lett. 32 12 1996 1144
6. A. Tauzin, T. Akatsu, M. Rabarot, J. Dechamp, M. Zussy, H. Moriceau, J.F. Michaud, A.M. Charvet, L. Di Cioccio, F. Fournel, J. Garrione, B. Faure, F. Letertre, and N. Kernevez Electron. Lett. 41 11 2005 668
7. J. Grisolia, G. Ben Assayag, A. Claverie, B. Aspar, C. Lagahe, and L. Laanab J. Appl. Phys. 76 7 2000 852
8. B. Aspar, H. Moriceau, E. Jalaguier, C. Lagahe, A. Soubie, B. Biasse, A.M. Papon, A. Claverie, J. Grisolia, G. Benassayag, F. Letertre, O. Rayssac, T. Barge, C. Maleville, and B. Ghyselen J. Electron. Mater. 30 7 2001 834
9. U. Heinle, and J. Olsson Sol. Stat. Elec. 45 4 2001 629
10. H. Takao, T. Ichikawa, T. Nakata, K. Sawada, and M. Ishida Proc. IEEE Int. Conf. MEMS 2008 359
11. N. Ikeda, J. Lee, S. Kaya, M. Iwami, T. Nomura, and S. Katoh Proc. SPIE 2009 721602
12. F. Henley, S. Kang, Z. Liu, L. Tian, J. Wang, and Y.L. Chow Conf. Record of the IEEE Photovoltaic Specialists Conf. 2009 1718
13. H. Assaf, and E. Ntsoenzok Nucl. Instrum. Meth. Phys. Res. B 240 2005 183
14. B. Aspar, C. Lagahé, H. Moriceau, A. Soubie, and M. Bruel Proc. IEEE Int. SOI Conf. 1998 137
15. B. Terreault Phys. Stat. Sol. A 204 7 2007 2129
16. L.-J. Huang, Q.-Y. Tong, Y.-L. Chao, T.-H. Lee, T. Martini, and U. Gösele Appl. Phys. Lett. 74 7 1999 982
17. S.W. Bedell, and W.A. Landford J. Appl. Phys. 90 3 2001 1138
18. Y. Zheng, S.S. Lau, T. Hochbauer, A. Misra, R. Verda, X.-M. He, M. Nastasi, and J.W. Mayer J. Appl. Phys. 89 2001 2972
19. B. Bech Nielsen, L. Hoffmann, and M. Budde Mat. Sci. and Eng. B 36 1996 259
20. M.K. Weldon, V.E. Marsico, Y.J. Chabal, A. Agarwal, D.J. Eaglesham, J. Sapjeta, W.L. Brown, D.C. Jacobson, Y. Caudano, S.B. Christman, and E.E. Chaban J. Vac. Sci. Technol. B 15 4 1997 1065
21. Y.J. Chabal, M.K. Weldon, Y. Caudano, B.B. Stefanov, and K. Raghavachari Physica B 273-274 1999 152
22. N. Rochat, A. Tauzin, F. Mazen, and L. Clavelier Electrochem. Solid-State Lett. 13 5 2010 G40
23. S. Personnic, K.K. Bourdelle, F. Letertre, A. Tauzin, N. Cherkashin, A. Claverie, R. Fortunier, and H. Klocker J. Appl. Phys. 103 2008 23508
24. T.P. Ma, in: INSPEC (Ed.), Properties of Silicon, EMIS Data rev. n°4 (1988), p. 654.
25. D.J. Eaglesham, A.E. White, L.C. Feldman, N. Moriya, and D.C. Jacobson Phys. Rev. Lett. 70 11 1993 1643