Transfer of thin silicon layers by MeV hydrogen implantation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 240, Issue 1-2, 2005, Pages 183-187

  Assaf, H ^a   Ntsoenzok, E ^a  

^a Centre National de la Recherche Scientifique   (France)

Author keywords

Hydrogen; Implantation; Si; Thin layers; Transfer

Indexed keywords

COMPUTER SIMULATION; DOSIMETRY; HYDROGEN; ION IMPLANTATION; NITROGEN; THICKNESS MEASUREMENT;

THIN LAYERS; TRANSFER;

SILICON;

EID: 27344444651     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2005.06.112     Document Type: Conference Paper

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