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Volumn 45, Issue 4, 2001, Pages 629-632

Integration of high voltage devices on thick SOI substrates for automotive applications

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC DEVICES; INTEGRATED CIRCUIT LAYOUT; SEMICONDUCTOR DIODES; SUBSTRATES; TRANSISTORS;

EID: 0035333692     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00085-5     Document Type: Article
Times cited : (12)

References (5)
  • 2
    • 0004839976 scopus 로고    scopus 로고
    • Method of anisotropically etching silicon. United States patent, Patent number 5,501,893.1996
    • Laermer, F.1    Schilp, A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.