Determination of the composition and thickness of semi-polar and non-polar III-nitride films and quantum wells using X-ray scattering

Journal of Applied Physics

Volumn 111, Issue 4, 2012, Pages

  Vickers, M E ^a   Hollander, J L ^a   McAleese, C ^a   Kappers, M J ^a   Moram, M A ^a   Humphreys, C J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY COMPOSITIONS; BARRIER LAYERS; CHARACTERISTIC LENGTH; CRYSTALLOGRAPHIC ORIENTATIONS; D-SPACING; DIFFRACTION DATA; GAN TEMPLATE; GENERAL EQUATIONS; HETEROEPITAXIAL; III-NITRIDE; III-NITRIDES; LIGHT EMITTING DEVICES; MULTIPLE QUANTUM-WELL STRUCTURES; NON-POLAR; OUT-OF-PLANE; QUANTUM WELL STRUCTURES; REFLECTIVITY DATA; SIMULATION SOFTWARE; STRAINED LAYERS; SUPER-LATTICE STRUCTURES; THICKNESS RATIO;

ALLOYING; COMPUTER SOFTWARE; DIFFRACTION; ELASTIC CONSTANTS; EPITAXIAL GROWTH; GALLIUM NITRIDE; SEMICONDUCTOR DEVICE STRUCTURES; X RAY SCATTERING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84857887048     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3678631     Document Type: Article

References (41)

1. T. Takeuchi, S. Sota, M. Katsuragawa, M. Komori, H. Takeuchi, H. Amano, and I. Akasaki, Jpn. J. Appl. Phys. 36, L382 (1997). 10.1143/JJAP.36.L382
2. A. E. Romanov, T. J. Baker, S. Nakamura, and J. S. Speck, J. Appl. Phys. 100, 023522 (2006). 10.1063/1.2218385
3. T. J. Badcock, P. Dawson, M. J. Kappers, C. McAleese, J. L. Hollander, C. F. Johnston, D. V. Sridhara Rao, A. M. Sanchez, and C. J. Humphreys, Appl. Phys. Lett. 93, 101901 (2008). 10.1063/1.2971205
4. P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, Nature (London) 406, 865 (2000). 10.1038/35022529
5. H. Asamizu, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, Appl. Phys. Express 2, 021002 (2009). 10.1143/APEX.2.021002
6. A. Tyagi, H. Zhong, R. B. Chung, D. F. Feezell, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura: Jpn. J. Appl. Phys. 46, L444 (2007). 10.1143/JJAP.46.L444
7. Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, Appl. Phys. Express 2, 082101 (2009). 10.1143/APEX.2.082101
8. P. S. Hsu, K. M. Kelchner, A. Tyagi, R. M. Farrell, D. A. Haeger, K. Fujito, H. Ohta, S. P. DenBaars, J. S. Speck, and S. Nakamura, Appl. Phys. Express 3, 052702 (2010). 10.1143/APEX.3.052702
9. J. S. Speck and S. F. Chichibu, MRS Bulletin 34, 304 (2009), and references therein. 10.1557/mrs2009.91
10. M. Schuster, P. O. Gervais, B. Jobst, W. Hosler, R. Averbeck, H. Riechert, A. Iberi, and R. Stommer, J. Phys. D: Appl. Phys. 32, A56 (1999). 10.1088/0022-3727/32/10A/312
11. M. E. Vickers, M. J. Kappers, T. M. Smeeton, E. J. Thrush, J. S. Barnard, and C. J. Humphreys, J. Appl. Phys. 94, 1565 (2003). 10.1063/1.1587251
12. P. F. Fewster, X-ray Scattering from Semiconductors (Imperial College Press, London, 2003).
13. A. F. Wright, J. Appl. Phys. 82, 2833 (1997). 10.1063/1.366114
14. S. Schulz, T. J. Badcock, M. A. Moram, P. Dawson, M. J. Kappers, C. J. Humphreys, and E. P. O'Reilly, Phys. Rev. B 82, 125318 (2010). 10.1103/PhysRevB.82.125318
15. M. A. Moram, C. F. Johnston, J. L. Hollander, M. J. Kappers, and C. J. Humphreys, J. Appl. Phys. 105, 113501 (2009). 10.1063/1.3129307
16. A. Chakraborty, K. C. Kim, F. Wu, J. S. Speck, S. P. DenBaars, and U. K. Mishra, Appl. Phys. Lett. 89, 041903 (2006). 10.1063/1.2234841
17. J. L. Hollander, M. J. Kappers, C. McAleese, and C. J. Humphreys, Appl. Phys. Lett. 92, 101104 (2008). 10.1063/1.2830023
18. M. J. Kappers, J. L. Hollander, C. McAleese, C. F. Johnston, R. F. Broom, J. S. Barnard, M. E. Vickers, and C. J. Humphreys, J. Cryst. Growth 300, 155 (2007). 10.1016/j.jcrysgro.2006.11.008
19. N. F. Gardner, J. C. Kim, J. J. Wierer, Y. C. Shen, and M. R. Krames, Appl. Phys. Lett. 86, 111101 (2005). 10.1063/1.1875765
20. M. D. Craven, F. Wu, A. Chakraborty, B. Imer, U. K. Mishra, S. P. DenBaars, and J. S. Speck, Appl. Phys. Lett. 84, 1281 (2004). 10.1063/1.1650545
21. M. A. Moram, C. F. Johnston, M. J. Kappers, and C. J. Humphreys, J. Phys. D: Appl. Phys. 42, 135407 (2009). 10.1088/0022-3727/42/13/135407
22. E. C. Young, F. Wu, A. E. Romanov, A. Tyagi, C. S. Gallinat, S. P. DenBaars, S. Nakamura, and J. S. Speck, Appl. Phys. Express 3, 011004 (2010). 10.1143/APEX.3.011004
23. P. De Mierry, T. Guehne, M. Nemoz, S. Chenot, E. Beraudo, and G. Nataf, Jpn. J. Appl. Phys. 48, 031002 (2009). 10.1143/JJAP.48.031002
24. P. Venngus, Z. Bougrioua, and T. Guehne, Jpn. J. Appl. Phys. 46, 4089 (2007). 10.1143/JJAP.46.4089
25. H. Lu, W. J. Schaff, L. F. Eastman, J. Wu, W. Walukiewicz, V. Cimalla, and O. Ambacher, Appl. Phys. Lett. 83, 1136 (2003). 10.1063/1.1599634
26. M. D. Craven, P. Waltereit, F. Wu, J. S. Speck, and S. P. DenBaars, Jpn. J. Appl. Phys. 42, L235 (2003). 10.1143/JJAP.42.L235
27. M. A. Moram and M. E. Vickers, Rep. Prog. Phys. 72, 036502 (2009). 10.1088/0034-4885/72/3/036502
28. L. Vegard, Z. Phys. 5, 17 (1921). 10.1007/BF01349680
29. J. F. Nye, Physical Properties of Crystals (Oxford University Press, Oxford, 2006).
30. A. Kelly, G. W. Groves, and P. Kidd, Crystallography and Crystal Defects (John Wiley, New York, 2000).
31. B. D. Cullity and S. R. Stock, Elements of X-ray Diffraction, 3rd ed. (Prentice Hall, Upper Saddle River, New Jersey, 2003).
32. P. Kidd, XRD of Gallium Nitride and Related Compounds: Strain, Composition and Layer Thickness (Panalytical, Almelo, 2009).
33. H. F. McMurdie, M. C. Morris, E. H. Evans, B. Paretzkin, J. H. de Groot, C. R. Hubbard, and S. J. Carmel, Aluminium Nitride Standard X-ray Diffraction Patterns (NBS Monograph 25, Sec. 12) (Institute for Materials ResearchNational Bureau of Standards, Washington, D.C., 1975), p. 5.
34. H. Angerer, D. Brunner, F. Fredenberg, O. Ambacher, M. Stutzmann, R. Hopler, T. Metzger, E. Born, G. Dollinger, A. Bergmaier, S. Karsch, and H. Korner, Appl. Phys. Lett. 71, 1504 (1997). 10.1063/1.119949
35. J. Dyck, K. Kash, C. Hayman, A. Argoitia M Grossner, J. Angus, and W. -L. Zhou, J. Mater. Res. 14, 2411 (1999). 10.1557/JMR.1999.0324
36. K. F. Riley, M. P. Hobson, and S. J. Bence, Mathematical Methods for Physics and Engineering, 3rd ed. (Cambridge University Press, Cambridge, 2003).
37. M. J. Kappers, J. L. Hollander, C. F. Johnston, C. McAleese, D. V. Sridhara Rao, A. M. Sanchez, C. J. Humphreys, T. J. Badcock, and P. Dawson, J. Cryst. Growth 310, 4983 (2008). 10.1016/j.jcrysgro.2008.08.048
38. C. F. Johnston, M. A. Moram, M. J. Kappers, and C. J. Humphreys, Appl. Phys. Lett. 94, 161109 (2009). 10.1063/1.3119321
39. M. E. Vickers, M. J. Kappers, R. Datta, C. McAleese, T. M. Smeeton, F. D. G. Rayment, and C. J. Humphreys, J. Phys. D: Appl. Phys. 38, A99 (2005). 10.1088/0022-3727/38/10A/019
40. E. C. Young, A. E. Romanov, and J. S. Speck, Appl. Phys. Express 4, 113 (2011). 10.1143/APEX.4.061001
41. A. E. Romanov, E. C. Young, F. Wu, A. Tyagi, C. S. Gallinat, S. Nakamura, S. P. DenBaars, and J. S. Speck, J. Appl. Phys. 109, 113 (2011). 10.1063/1.3590141