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Volumn 518, Issue 16, 2010, Pages 4680-4683
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Electrical characterisation of HfYO MIM-structures deposited by ALD
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Author keywords
ALD; Doping; HfO2; High k; MIM; Y2O3; Yttrium
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Indexed keywords
ALD;
DOPING;
HFO2;
HIGH K;
MIM;
Y2O3;
AMORPHOUS FILMS;
DOPING (ADDITIVES);
HAFNIUM COMPOUNDS;
THICK FILMS;
TITANIUM NITRIDE;
YTTRIUM;
YTTRIUM ALLOYS;
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EID: 77955635444
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2009.12.058 Document Type: Conference Paper |
Times cited : (13)
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References (10)
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